Integration of high quality top-gated graphene field effect devices on 150 mm substrate

Abstract

Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration of high performance field effect devices. Here, we report the first demonstration of high quality top-gated graphene field effect devices on 150 mm substrates exploiting unprecedented homogeneous CVD growth of monolayer graphene.