{"title":"InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)","authors":"J. Cowles, W. Chen, G. Munns, G. Haddad","doi":"10.1109/CORNEL.1993.303069","DOIUrl":null,"url":null,"abstract":"InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain /spl beta/ remains high in both structures. Microwave measurements performed on the DHBT reveal that f/sub t/ increases monotonically with J/sub c/ up to at least 10/sup 5/ A/cm/sup 2/ showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain /spl beta/ remains high in both structures. Microwave measurements performed on the DHBT reveal that f/sub t/ increases monotonically with J/sub c/ up to at least 10/sup 5/ A/cm/sup 2/ showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
