First Pass Multi Cell Modeling Strategy for GaN Package Devices

Abstract

A generic modeling topology is proposed for high power packaged GaN HFET devices leading to first pass design/modeling success. In addition to the EM environment of the package parasitics, the model considers thermal cross coupling and electrode cross coupling effects at the multi-cell device array to arrive at sufficiently accurate model. The model derived by studying a 5-cell GaN part is played back against 1,3,7 cell packaged devices from different types of GaN process to show model agreements at 0.9,2.14 and 3.5 GHz demonstrating acceptable first pass design success.