Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044199

Y. Liu, T. Mastukawa, K. Endo, S. Oruchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Sakamoto, M. Masahara, T. Kamei, T. Hayashida, A. Ogura

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引用次数: 1

Abstract

The threshold voltage (Vt) in scaled poly-Si channel FinFETs and tri-gate flash memories with poly-Si floating gate (FG) was systematically compared with crystal channel ones, for the first time. It was found that some superior Id-Vg characteristics are observed in the scaled poly-Si channel FinFETs with gate length (Lg) down to 54 nm or less. The standard deviation of Vt (σVt) of poly-Si channel FinFETs was 3 times higher than that of crystal channel ones at the same gate oxide thickness (Tox). However, the σVt of poly-Si channel tri-gate flash memories after one program/erase (P/E) cycle became comparable to that of crystal channel ones. Moreover, it was found that punch-through voltage of the poly-Si channel tri-gate flash memory is as high as 4.6 V even Lg was down to 76 nm.

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用于高密度和低成本堆叠3d存储器应用的缩放多晶硅通道finfet和三门闪存的可变性分析

本文首次系统地比较了多晶硅通道finfet和多晶硅浮栅三栅极闪存的阈值电压(Vt)与晶体通道的阈值电压(Vt)。结果表明，栅极长度(Lg)小于等于54 nm的多晶硅沟道finfet具有优越的Id-Vg特性。在相同栅极氧化物厚度(Tox)下，多晶硅沟道finfet的Vt (σVt)标准差是晶体沟道finfet的3倍。而多晶硅通道三栅极闪存经过一个程序/擦除(P/E)周期后的σVt与晶体通道闪存相当。此外，发现即使Lg降低到76 nm，多晶硅通道三栅极闪存的击穿电压也高达4.6 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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