J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Könemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. Pandey, A. Todri-Sanial
{"title":"A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects","authors":"J. Liang, R. Ramos, J. Dijon, H. Okuno, D. Kalita, D. Renaud, J. Lee, V. Georgiev, S. Berrada, T. Sadi, A. Asenov, B. Uhlig, K. Lilienthal, A. Dhavamani, F. Könemann, B. Gotsmann, G. Goncalves, B. Chen, K. Teo, R. Pandey, A. Todri-Sanial","doi":"10.1109/IEDM.2017.8268502","DOIUrl":null,"url":null,"abstract":"We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
We investigate, by combining physical and electrical measurements together with an atomistic-to-circuit modeling approach, the conductance of doped carbon nanotubes (CNTs) and their eligibility as possible candidate for next generation back-end-of-line (BEOL) interconnects. Ab-initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical conductance up to 90% by converting semiconducting shells to metallic. Circuit-level simulations predict up to 88% signal delay improvement with doped vs. pristine CNT. Electrical measurements of Pt-salt doped CNTs provide up to 50% of resistance reduction which is a milestone result for future CNT interconnect technology.