Pub Date : 2017-12-06DOI: 10.1109/IEDM.2017.8268526
Weon‐Guk Kim, Daewon Kim, Seung‐Bae Jeon, Sang-Jae Park, Il-Woong Tcho, H. Bae, H. Im, Yang-Kyu Choi
A triboelectric nanogenerator (TENG) composed of porous conductive-polymer and intercalated PTFE wrapping wires, is demonstrated. The proposed TENG generated a short-circuit current for a long duration and showed enhanced output performance compared with the conventional flat TENG. To qualitatively analyze the output characteristics of the proposed TENG, modeling based on parallel connection of the finite capacitors was accomplished while focusing on two important factors: surface charge density and effective surface area. Simulation was also carried out and the results were compared with the measured data to validate the proposed model.
{"title":"A novel triboelectric nanogenerator with high performance and long duration time of sinusoidal current generation","authors":"Weon‐Guk Kim, Daewon Kim, Seung‐Bae Jeon, Sang-Jae Park, Il-Woong Tcho, H. Bae, H. Im, Yang-Kyu Choi","doi":"10.1109/IEDM.2017.8268526","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268526","url":null,"abstract":"A triboelectric nanogenerator (TENG) composed of porous conductive-polymer and intercalated PTFE wrapping wires, is demonstrated. The proposed TENG generated a short-circuit current for a long duration and showed enhanced output performance compared with the conventional flat TENG. To qualitatively analyze the output characteristics of the proposed TENG, modeling based on parallel connection of the finite capacitors was accomplished while focusing on two important factors: surface charge density and effective surface area. Simulation was also carried out and the results were compared with the measured data to validate the proposed model.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125012907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-05DOI: 10.1109/IEDM.2017.8268449
Jaehyuk Park, Dongwook Lee, Jongmyung Yoo, H. Hwang
To realize a steep slope field-effect transistor (FET) with low leakage current and controllable operating bias, NbO2 threshold switching (TS) device is connected in series with the gate side of a MOSFET. Thanks to the TS device showing abrupt transition between the OFF and ON states at threshold voltage (Vth), the implemented transistor exhibits extremely low leakage current (10−7μA/μm), high Ion/Ioff ratio (>106), sub-2 mV/dec subthreshold swing, drift-free characteristic and high temperature operation (>85°C). Furthermore, since the Vth is tunable by controlling thickness of the NbO2 TS device, the new NbO2-MOSFET can fulfill various demands of operating bias conditions. In addition, we confirmed through a simulation that the CMOS inverter with NbO2 connected to the gate side showed fast inverting speed of over 300 MHz at ultra-low voltage (<0.3V), improved propagation delay time by x3.0 and reduced operation Vd (ΔV>200mV).
{"title":"NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time","authors":"Jaehyuk Park, Dongwook Lee, Jongmyung Yoo, H. Hwang","doi":"10.1109/IEDM.2017.8268449","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268449","url":null,"abstract":"To realize a steep slope field-effect transistor (FET) with low leakage current and controllable operating bias, NbO2 threshold switching (TS) device is connected in series with the gate side of a MOSFET. Thanks to the TS device showing abrupt transition between the OFF and ON states at threshold voltage (Vth), the implemented transistor exhibits extremely low leakage current (10<sup>−7</sup>μA/μm), high I<inf>on</inf>/I<inf>off</inf> ratio (>10<sup>6</sup>), sub-2 mV/dec subthreshold swing, drift-free characteristic and high temperature operation (>85°C). Furthermore, since the Vth is tunable by controlling thickness of the NbO<inf>2</inf> TS device, the new NbO<inf>2</inf>-MOSFET can fulfill various demands of operating bias conditions. In addition, we confirmed through a simulation that the CMOS inverter with NbO<inf>2</inf> connected to the gate side showed fast inverting speed of over 300 MHz at ultra-low voltage (<0.3V), improved propagation delay time by x3.0 and reduced operation V<inf>d</inf> (ΔV>200mV).","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129758917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-05DOI: 10.1109/IEDM.2017.8268413
F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guérin, Adrian M. Ionescu
This paper reports a novel fully integrated low power multi-sensing smart system, which, by wafer-level 3D heterogeneous integration of Ion Sensitive Fully Depleted (FD) FETs and SU-8 micro/nanofludics, achieves the first of its kind wearable multi-sensing system, called Lab on SkinTM, capable to detect biomarkers in human sweat. In the reported configuration, the multi-sensing system exploits arrays of functionalized sensors capable to simultaneously detect pH, Na+ and K+ concentrations in sweat in real time. We present a detailed electrical DC and dynamic characterization, showing excellent sensitivities (52mV/dec for pH and −37mV/dec for Na+ sensors) with ultra-low power consumption (less than 50 nWatts/sensor). We report ion cross-sensitivities and a differential measurement approach that allows calibrated measurements. Overall, the paper reports significant advances in the design and fabrication of micro/nanofludics channels, inlets compatible with human skin pore size and density, and outlet passive pumps with flow rates of tens of pl/s; all capable of exploiting capillary forces in order to provide a zero energy pumping of sweat into sensing channels. Moreover, we report the first integration of a miniaturized Ag/AgCl Quasi-Reference Electrodes (QRE) into the sensing system, with long term stability, paving the way for fully wearable electronic chips in flexible patches or as plug-in modules in wrist based devices.
本文报道了一种全新的全集成低功耗多传感智能系统，该系统通过离子敏感全耗尽(FD)场效应管和SU-8微/纳米流体的晶圆级3D异构集成，实现了第一个可穿戴多传感系统，称为Lab on skinm，能够检测人体汗液中的生物标志物。在报告的配置中，多传感系统利用功能化传感器阵列，能够同时实时检测汗液中的pH、Na+和K+浓度。我们展示了详细的直流和动态特性，显示出优异的灵敏度(pH传感器52mV/dec, Na+传感器- 37mV/dec)和超低功耗(小于50 nWatts/传感器)。我们报告离子交叉灵敏度和差分测量方法，允许校准测量。总体而言，本文报道了微/纳米流体通道的设计和制造方面的重大进展，与人体皮肤孔径和密度兼容的入口，以及流量为数十pl/s的出口被动泵;所有这些都能够利用毛细力来提供零能量的汗水泵入传感通道。此外，我们报告了首次将小型化Ag/AgCl准参考电极(QRE)集成到传感系统中，具有长期稳定性，为柔性贴片中的完全可穿戴电子芯片或腕式设备中的插件模块铺平了道路。
{"title":"Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications","authors":"F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guérin, Adrian M. Ionescu","doi":"10.1109/IEDM.2017.8268413","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268413","url":null,"abstract":"This paper reports a novel fully integrated low power multi-sensing smart system, which, by wafer-level 3D heterogeneous integration of Ion Sensitive Fully Depleted (FD) FETs and SU-8 micro/nanofludics, achieves the first of its kind wearable multi-sensing system, called Lab on SkinTM, capable to detect biomarkers in human sweat. In the reported configuration, the multi-sensing system exploits arrays of functionalized sensors capable to simultaneously detect pH, Na+ and K+ concentrations in sweat in real time. We present a detailed electrical DC and dynamic characterization, showing excellent sensitivities (52mV/dec for pH and −37mV/dec for Na+ sensors) with ultra-low power consumption (less than 50 nWatts/sensor). We report ion cross-sensitivities and a differential measurement approach that allows calibrated measurements. Overall, the paper reports significant advances in the design and fabrication of micro/nanofludics channels, inlets compatible with human skin pore size and density, and outlet passive pumps with flow rates of tens of pl/s; all capable of exploiting capillary forces in order to provide a zero energy pumping of sweat into sensing channels. Moreover, we report the first integration of a miniaturized Ag/AgCl Quasi-Reference Electrodes (QRE) into the sensing system, with long term stability, paving the way for fully wearable electronic chips in flexible patches or as plug-in modules in wrist based devices.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114671592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For the first time, this work investigated the time-dependent variability (TDV) in RRAMs and its interaction with the RRAM-based analog neuromorphic circuits for pattern recognition. It is found that even the circuits are well trained, the TDV effect can introduce non-negligible recognition accuracy drop during the operating condition. The impact of TDV on the neuromorphic circuits increases when higher resistances are used for the circuit implementation, challenging for the future low power operation. In addition, the impact of TDV cannot be suppressed by either scaling up with more synapses or increasing the response time and thus threatens both real-time and general-purpose applications with high accuracy requirements. Further study on different circuit configurations, operating conditions and training algorithms, provides guidelines for the practical hardware implementation.
{"title":"Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition","authors":"Jian Kang, Zhizhen Yu, Lindong Wu, Yichen Fang, Zongwei Wang, Yimao Cai, Zhigang Ji, Jianfu Zhang, Runsheng Wang, Yuchao Yang, Ru Huang","doi":"10.1109/IEDM.2017.8268340","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268340","url":null,"abstract":"For the first time, this work investigated the time-dependent variability (TDV) in RRAMs and its interaction with the RRAM-based analog neuromorphic circuits for pattern recognition. It is found that even the circuits are well trained, the TDV effect can introduce non-negligible recognition accuracy drop during the operating condition. The impact of TDV on the neuromorphic circuits increases when higher resistances are used for the circuit implementation, challenging for the future low power operation. In addition, the impact of TDV cannot be suppressed by either scaling up with more synapses or increasing the response time and thus threatens both real-time and general-purpose applications with high accuracy requirements. Further study on different circuit configurations, operating conditions and training algorithms, provides guidelines for the practical hardware implementation.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121725213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-04DOI: 10.1109/IEDM.2017.8268416
H. Bae, Weon‐Guk Kim, Hongkeun Park, Seung‐Bae Jeon, Soo-ho Jung, H. Lee, Myung-Su Kim, Il-Woong Tcho, Byung Chul Jang, H. Im, Sung‐Yool Choi, S. Im, Yang‐Kyu Choi
This study demonstrated a wearable and flexible temperature sensing circuitry for a diagnosis of skin temperature. This system is based on a novel carbon nanotubes (CNTs)-based temperature sensor (CTS) array, built on cotton yarn using a mixture of multi-walled (MW)-CNTs and PDMS (polydimethylsiloxane). To divide and select the unit thermistors, a memristor which operates in the normally-off state was utilized. To construct the memristors, an Al precursor-based solution dip coating method and initiated chemical vapor deposition (iCVD) were employed for the metal electrode and resistive switching layer (RSL), respectively. Using the aforementioned processes, aluminum (Al) electrode and poly (ethylene glycol methacrylate, pEGDMA)-RSL layers were deposited on a cotton yarn backbone. A unit temperature sensor based on the proposed circuitry was fabricated by intersecting the Al/pEGDMA-coated yarns to both sides of the CTS wire, while forming a 1-thermistor and 2-memristor (1T-2M). This architecture exhibited promising performance as a sensor-array system for a fully fabric-based wearable healthcare device.
{"title":"Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for wearable healthcare device","authors":"H. Bae, Weon‐Guk Kim, Hongkeun Park, Seung‐Bae Jeon, Soo-ho Jung, H. Lee, Myung-Su Kim, Il-Woong Tcho, Byung Chul Jang, H. Im, Sung‐Yool Choi, S. Im, Yang‐Kyu Choi","doi":"10.1109/IEDM.2017.8268416","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268416","url":null,"abstract":"This study demonstrated a wearable and flexible temperature sensing circuitry for a diagnosis of skin temperature. This system is based on a novel carbon nanotubes (CNTs)-based temperature sensor (CTS) array, built on cotton yarn using a mixture of multi-walled (MW)-CNTs and PDMS (polydimethylsiloxane). To divide and select the unit thermistors, a memristor which operates in the normally-off state was utilized. To construct the memristors, an Al precursor-based solution dip coating method and initiated chemical vapor deposition (iCVD) were employed for the metal electrode and resistive switching layer (RSL), respectively. Using the aforementioned processes, aluminum (Al) electrode and poly (ethylene glycol methacrylate, pEGDMA)-RSL layers were deposited on a cotton yarn backbone. A unit temperature sensor based on the proposed circuitry was fabricated by intersecting the Al/pEGDMA-coated yarns to both sides of the CTS wire, while forming a 1-thermistor and 2-memristor (1T-2M). This architecture exhibited promising performance as a sensor-array system for a fully fabric-based wearable healthcare device.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126473118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-02DOI: 10.1109/IEDM.2017.8268478
F. Michelini, K. Beltako, M. Bescond, N. Cavassilas, L. Raymond
We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donors and an acceptor sandwiched between two electrodes and excited by a Gaussian femtosecond laser pulse. Features of direct energy currents are thus correlated to the intra-molecular structure.
{"title":"Time-resolved quantum transport for optoelectronics","authors":"F. Michelini, K. Beltako, M. Bescond, N. Cavassilas, L. Raymond","doi":"10.1109/IEDM.2017.8268478","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268478","url":null,"abstract":"We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donors and an acceptor sandwiched between two electrodes and excited by a Gaussian femtosecond laser pulse. Features of direct energy currents are thus correlated to the intra-molecular structure.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124939088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-02DOI: 10.1109/IEDM.2017.8268517
V. Nguyen, P. Sabon, J. Chatterjee, L. Tille, P. Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny
Nano-patterning magnetic tunnel junction (MTJ) cells at low dimension and very dense pitch remains a challenge for high density STT-MRAM due to the difficulty of MTJ stacks etching. To circumvent this etching issue, this paper demonstrates a novel scalable approach for MTJ nano-patterning at very narrow pitch (pitch = 1.5F, F = MTJ dot diameter) by growing the MTJ material on pre-patterned conducting non-magnetic pillars without post-deposition etching. Advantageously, these pillars could be the vias connecting the different metal levels in CMOS technology. Structural, magnetic and transport properties of so prepared MgO-based MTJs were investigated. The comparison with those obtained by conventional ion beam etching (IBE) shows that this novel approach is quite promising to circumvent the issue of MTJ etching for high density MRAM.
低维、高密度节距的纳米磁性隧道结(MTJ)电池由于MTJ堆叠的蚀刻困难，对高密度STT-MRAM来说仍然是一个挑战。为了避免这种蚀刻问题，本文展示了一种新颖的可扩展方法，用于在非常窄的间距(间距= 1.5F, F = MTJ点直径)上进行MTJ纳米图像化，即在预图像化的导电非磁性柱上生长MTJ材料，而无需进行沉积后蚀刻。有利的是，在CMOS技术中，这些柱可以作为连接不同金属层的过孔。研究了制备的mgo基MTJs的结构、磁性和输运性能。与传统离子束刻蚀(IBE)方法的比较表明，该方法很有希望解决高密度MRAM中MTJ刻蚀的问题。
{"title":"Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications","authors":"V. Nguyen, P. Sabon, J. Chatterjee, L. Tille, P. Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny","doi":"10.1109/IEDM.2017.8268517","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268517","url":null,"abstract":"Nano-patterning magnetic tunnel junction (MTJ) cells at low dimension and very dense pitch remains a challenge for high density STT-MRAM due to the difficulty of MTJ stacks etching. To circumvent this etching issue, this paper demonstrates a novel scalable approach for MTJ nano-patterning at very narrow pitch (pitch = 1.5F, F = MTJ dot diameter) by growing the MTJ material on pre-patterned conducting non-magnetic pillars without post-deposition etching. Advantageously, these pillars could be the vias connecting the different metal levels in CMOS technology. Structural, magnetic and transport properties of so prepared MgO-based MTJs were investigated. The comparison with those obtained by conventional ion beam etching (IBE) shows that this novel approach is quite promising to circumvent the issue of MTJ etching for high density MRAM.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123211138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-02DOI: 10.1109/IEDM.2017.8268458
T. Pham, J. Pernot, C. Masante, D. Eon, E. Gheeraert, G. Chicot, F. Udrea, N. Rouger
We report here the fabrication and characterization of a lateral monocrystalline diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET). First, 20–40 nm of an Al2O3 layer has been deposited by ALD (380°C) on Oxygen terminated boron doped diamond and annealed at high temperature (500°C). This process has been optimized to build MOS capacitors that show gate control with distinctive accumulation, flatband, depletion and deep depletion, regions without gate leakage. Following this, lateral diamond MOSFETs operating in the deep depletion regime have been experimentally demonstrated, exhibiting already impressive features: 200 V breakdown with 0.6 nA/mm gate and drain leakage, 4 MV/cm peak electric field at breakdown even without the use of field plates, carrier mobility between 1000 and 1700 cm2/V.s, with a doping of the epilayer at 1.75×1017 cm−3 (Boron doped-MPCVD).
{"title":"200V, 4MV/cm lateral diamond MOSFET","authors":"T. Pham, J. Pernot, C. Masante, D. Eon, E. Gheeraert, G. Chicot, F. Udrea, N. Rouger","doi":"10.1109/IEDM.2017.8268458","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268458","url":null,"abstract":"We report here the fabrication and characterization of a lateral monocrystalline diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET). First, 20–40 nm of an Al2O3 layer has been deposited by ALD (380°C) on Oxygen terminated boron doped diamond and annealed at high temperature (500°C). This process has been optimized to build MOS capacitors that show gate control with distinctive accumulation, flatband, depletion and deep depletion, regions without gate leakage. Following this, lateral diamond MOSFETs operating in the deep depletion regime have been experimentally demonstrated, exhibiting already impressive features: 200 V breakdown with 0.6 nA/mm gate and drain leakage, 4 MV/cm peak electric field at breakdown even without the use of field plates, carrier mobility between 1000 and 1700 cm2/V.s, with a doping of the epilayer at 1.75×1017 cm−3 (Boron doped-MPCVD).","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128528900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-02DOI: 10.1109/IEDM.2017.8268311
M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. L. Barbera, A. Verdy, N. Castellani, A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. Desalvo, J. Portal, E. Nowak
This paper presents an HfO2 based resistive switching memory (RRAM) in series with a GeSe-based Ovonic Threshold Switching (OTS) selector. Detailed investigation of the main memory operations, forming, set, reset and read is presented for the first time to our knowledge. An innovative reading strategy is proposed. The selector switching is performed only if the RRAM cell is in the Low Resistive State (LRS), while the reading of the High Resistive State (HRS) is performed without switching the OTS selector, preventing disruptive reading when the RRAM cell is in HRS. Up to 106 read cycles have been demonstrated with a stable memory window of one decade and a stable OTS OFF state.
{"title":"In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors","authors":"M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. L. Barbera, A. Verdy, N. Castellani, A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. Desalvo, J. Portal, E. Nowak","doi":"10.1109/IEDM.2017.8268311","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268311","url":null,"abstract":"This paper presents an HfO2 based resistive switching memory (RRAM) in series with a GeSe-based Ovonic Threshold Switching (OTS) selector. Detailed investigation of the main memory operations, forming, set, reset and read is presented for the first time to our knowledge. An innovative reading strategy is proposed. The selector switching is performed only if the RRAM cell is in the Low Resistive State (LRS), while the reading of the High Resistive State (HRS) is performed without switching the OTS selector, preventing disruptive reading when the RRAM cell is in HRS. Up to 106 read cycles have been demonstrated with a stable memory window of one decade and a stable OTS OFF state.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122206091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-02DOI: 10.1109/IEDM.2017.8268465
R. Malbec, B. Chami, H. T. M. Ngo, A. Didelot, F. Garlan, S. Garrigou, V. Taly, Lorène Aeschbach, Evgeniya Trofimenko, Vincent Dion, A. Boutonnet-Rodat, F. Ginot, A. Bancaud
Circulating cell-free DNA (cfDNA) is a powerful cancer biomarker for establishing targeted therapies or monitoring patients' treatment. However, current cfDNA characterization is severely limited by its low concentration, requiring the extensive use of amplification techniques. Here we report that the μLAS technology allows us to quantitatively characterize the size distribution of purified cfDNA in a few minutes, even when its concentration is as low as 1 pg/μL. Moreover, we show that DNA profiles can be directly measured in blood plasma with a minimal conditioning process to speed up considerably speed up the cfDNA analytical chain.
{"title":"Direct characterization of circulating DNA in blood plasma using μLAS technology","authors":"R. Malbec, B. Chami, H. T. M. Ngo, A. Didelot, F. Garlan, S. Garrigou, V. Taly, Lorène Aeschbach, Evgeniya Trofimenko, Vincent Dion, A. Boutonnet-Rodat, F. Ginot, A. Bancaud","doi":"10.1109/IEDM.2017.8268465","DOIUrl":"https://doi.org/10.1109/IEDM.2017.8268465","url":null,"abstract":"Circulating cell-free DNA (cfDNA) is a powerful cancer biomarker for establishing targeted therapies or monitoring patients' treatment. However, current cfDNA characterization is severely limited by its low concentration, requiring the extensive use of amplification techniques. Here we report that the μLAS technology allows us to quantitatively characterize the size distribution of purified cfDNA in a few minutes, even when its concentration is as low as 1 pg/μL. Moreover, we show that DNA profiles can be directly measured in blood plasma with a minimal conditioning process to speed up considerably speed up the cfDNA analytical chain.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121601492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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