Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition

Jian Kang, Zhizhen Yu, Lindong Wu, Yichen Fang, Zongwei Wang, Yimao Cai, Zhigang Ji, Jianfu Zhang, Runsheng Wang, Yuchao Yang, Ru Huang
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引用次数: 32

Abstract

For the first time, this work investigated the time-dependent variability (TDV) in RRAMs and its interaction with the RRAM-based analog neuromorphic circuits for pattern recognition. It is found that even the circuits are well trained, the TDV effect can introduce non-negligible recognition accuracy drop during the operating condition. The impact of TDV on the neuromorphic circuits increases when higher resistances are used for the circuit implementation, challenging for the future low power operation. In addition, the impact of TDV cannot be suppressed by either scaling up with more synapses or increasing the response time and thus threatens both real-time and general-purpose applications with high accuracy requirements. Further study on different circuit configurations, operating conditions and training algorithms, provides guidelines for the practical hardware implementation.
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基于随机存储器的模式识别模拟神经形态系统的时变特性
本研究首次研究了rram的时间依赖性变异性(TDV)及其与基于rram的模拟神经形态回路在模式识别中的相互作用。研究发现,即使对电路进行了良好的训练,在工作状态下,TDV效应也会引起不可忽略的识别精度下降。当电路实现中使用更高的电阻时,TDV对神经形态电路的影响会增加,这对未来的低功耗操作具有挑战性。此外,TDV的影响不能通过增加更多的突触或增加响应时间来抑制,从而威胁到具有高精度要求的实时和通用应用。进一步研究不同的电路配置、工作条件和训练算法,为实际的硬件实现提供指导。
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