Spintronics materials and devices - ferromagnetic semiconduc-tors and heterostructures

Abstract

Introducing spin degrees of freedom into the present semiconductor electronics is a very important issue for realizing novel devices which will be needed in the future information technology. For fabricating such devices, it is necessary to exploit and fabricate semiconductor-based magnetic materials. III-V-based ferromagnetic semiconductors and MnAs/III-V hybrid nanostructures are hopeful candidates and model systems for future spintronic devices [1, 2].