Silicon OEICs with optical switching and amplification capability

Abstract

New methods to integrate InP based active devices with Si based passive waveguide is proposed. Using evanescent wave coupling between waveguides and flip-chip bonding techniques we can build seamless interface between silicon waveguides and broadband InP gain materials. The beam propagation method (BPM) was used to analyze and simulate the integrated structure. The simulation shows that the coupling efficiency is determined by waveguide taper length, taper angle, taper thickness, separation distance between InP waveguide core and Si waveguide core, effective index and growth thickness of InP taper, and offset between two waveguide tapers. After optimizing these parameters, 80% coupling efficiency is achieved. A second method using U-shape semiconductor optical amplifiers (SOAs) to connect waveguides and avoid double side coupling issues will also be discussed.