L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart
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引用次数: 1
Abstract
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.
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