Pub Date : 2014-08-21DOI: 10.1109/ICIPRM.2014.6880581
L. Fang, C. Bachelet, I. Sagnes, G. Beaudoin, J. Oudar
Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In0.53Ga0.47As-based saturable absorber due to an effective Fe3+/Fe2+ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe2+/Fe3+ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.
{"title":"Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm","authors":"L. Fang, C. Bachelet, I. Sagnes, G. Beaudoin, J. Oudar","doi":"10.1109/ICIPRM.2014.6880581","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880581","url":null,"abstract":"Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In0.53Ga0.47As-based saturable absorber due to an effective Fe3+/Fe2+ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe2+/Fe3+ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116252331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-08-21DOI: 10.1109/ICIPRM.2014.6880578
Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.
{"title":"Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform","authors":"Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2014.6880578","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880578","url":null,"abstract":"Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130442438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880542
A. Khalid, S. Thoms, D. Macintyre, I. Thayne, D. Cumming
We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.
{"title":"Fabrication of submicron planar Gunn diode","authors":"A. Khalid, S. Thoms, D. Macintyre, I. Thayne, D. Cumming","doi":"10.1109/ICIPRM.2014.6880542","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880542","url":null,"abstract":"We present, for the first time, the fabrication process for a submicron planar Gunn diode in In0.53Ga0.47As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126260795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880546
Y. Jiao, J. Pello, Longfei Shen, B. Smalbrugge, M. Smit, J. V. D. van der Tol
We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.
{"title":"Improved electron-beam lithography with C60 fullerene for InP membrane waveguides","authors":"Y. Jiao, J. Pello, Longfei Shen, B. Smalbrugge, M. Smit, J. V. D. van der Tol","doi":"10.1109/ICIPRM.2014.6880546","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880546","url":null,"abstract":"We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C60 fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127984536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880529
M. Patrashin, N. Sekine, A. Kasamatsu, I. Watanabe, I. Hosako, Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220-330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity at temperatures from 17K to 300K were less than 2dB.
{"title":"Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range","authors":"M. Patrashin, N. Sekine, A. Kasamatsu, I. Watanabe, I. Hosako, Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara","doi":"10.1109/ICIPRM.2014.6880529","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880529","url":null,"abstract":"This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220-330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity at temperatures from 17K to 300K were less than 2dB.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130098091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880527
Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang
A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.
{"title":"A sub-mW D-band 2nd harmonic oscillator using InP-based quantum-effect tunneling devices","authors":"Jooseok Lee, Maengkyu Kim, Jongwon Lee, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880527","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880527","url":null,"abstract":"A compact D-band 2nd harmonic oscillator utilizing a push-push approach is demonstrated for the first time by using InP-based RTDs (resonant tunneling diodes). In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD MMIC technology operates at an oscillation frequency of 164.6 GHz. The total dc power consumption of the RTD oscillator is 0.4 mW, which is the lowest value reported up to date in the mm-wave D-band MMIC oscillators.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130840438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880530
L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.
{"title":"InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate","authors":"L. Desplanque, Xianglei Han, M. Fahed, V. Chinni, D. Troadec, M. Chauvat, P. Ruterana, X. Wallart","doi":"10.1109/ICIPRM.2014.6880530","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880530","url":null,"abstract":"We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115564657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880531
Jue Wang, Liquan Wang, Chong Li, K. Alharbi, A. Khalid, E. Wasige
This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.
{"title":"W-band InP-based resonant tunnelling diode oscillator with milliwatt output power","authors":"Jue Wang, Liquan Wang, Chong Li, K. Alharbi, A. Khalid, E. Wasige","doi":"10.1109/ICIPRM.2014.6880531","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880531","url":null,"abstract":"This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128710766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880516
G. Crosnier, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri
Fabrication of high Q-factor InP-based Photonic Crystal nanobeam cavities is demonstrated by improving ICP etching. We measure Q-factors as high as ~130,000 for passive cavities by integrating them on to SOI wire waveguides. Nanolasers exhibiting low lasing threshold are then obtained using this technology.
{"title":"High Q-factor InP Photonic Crystal nanobeam cavities for laser emission","authors":"G. Crosnier, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri","doi":"10.1109/ICIPRM.2014.6880516","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880516","url":null,"abstract":"Fabrication of high Q-factor InP-based Photonic Crystal nanobeam cavities is demonstrated by improving ICP etching. We measure Q-factors as high as ~130,000 for passive cavities by integrating them on to SOI wire waveguides. Nanolasers exhibiting low lasing threshold are then obtained using this technology.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121372003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-05-11DOI: 10.1109/ICIPRM.2014.6880575
K. Lawniczuk
A generic foundry model in photonics enables design and fabrication of a variety of different photonic devices, for many applications, using standardized high-performance foundry platforms. Access to the generic foundries is available via multi-project wafer runs. In this way, the costs for developing photonic ICs are reduced by more than an order of magnitude and come within reach for SMEs and universities. The reduction of processing costs is achieved by costs-sharing among many application users participating in one fab cycle, and by reusing standardized and parameterized photonic components. A closer view on an indium phosphide based photonic ICs is given.
{"title":"Photonic ICs in a generic foundry","authors":"K. Lawniczuk","doi":"10.1109/ICIPRM.2014.6880575","DOIUrl":"https://doi.org/10.1109/ICIPRM.2014.6880575","url":null,"abstract":"A generic foundry model in photonics enables design and fabrication of a variety of different photonic devices, for many applications, using standardized high-performance foundry platforms. Access to the generic foundries is available via multi-project wafer runs. In this way, the costs for developing photonic ICs are reduced by more than an order of magnitude and come within reach for SMEs and universities. The reduction of processing costs is achieved by costs-sharing among many application users participating in one fab cycle, and by reusing standardized and parameterized photonic components. A closer view on an indium phosphide based photonic ICs is given.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131517799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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