Yongpeng Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
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引用次数: 1
Abstract
Low-dark-current InGaAs metal-semiconductor-metal (MSM) photodetectors monolithically integrated with InP photonic-wire waveguides are fabricated on III-V CMOS photonics platform. By using the Schottky barrier enhancement layer consisting of the InP/InAlAs layers, the dark current is successfully reduced to 7nA at 1V bias.
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