{"title":"GaAs monolithic single-chip transceiver","authors":"A. Boveda, F. Ortigoso","doi":"10.1109/MCS.1995.470997","DOIUrl":null,"url":null,"abstract":"A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"222 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
