This paper proposes a novel architecture and MMICs for an integrated front end of a 2-32 GHz spectrum analyzer. The architecture achieves miniaturization by eliminating the YIG tracking filter. The MMICs achieve ultra-wideband performances as well as chip-size reduction by utilizing novel FET cells for the basic circuit functions.<>
{"title":"Novel architecture and MMICs for an integrated front end of a spectrum analyzer","authors":"T. Takenaka, A. Miyazaki, H. Matsuura","doi":"10.1109/MCS.1995.470957","DOIUrl":"https://doi.org/10.1109/MCS.1995.470957","url":null,"abstract":"This paper proposes a novel architecture and MMICs for an integrated front end of a 2-32 GHz spectrum analyzer. The architecture achieves miniaturization by eliminating the YIG tracking filter. The MMICs achieve ultra-wideband performances as well as chip-size reduction by utilizing novel FET cells for the basic circuit functions.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115538000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<>
{"title":"X-band MMIC switch with 70 dB isolation and 0.5 dB insertion loss","authors":"D. Blackwell, D. Dawson, D. Buck","doi":"10.1109/MCS.1995.470982","DOIUrl":"https://doi.org/10.1109/MCS.1995.470982","url":null,"abstract":"A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123056003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel circuit structure for a MMIC C-band analog vector modulator is described. It provides full 360 degree phase coverage with 50 dB amplitude range over an octave band. The MMIC die size is 70/spl times/70 mil.<>
{"title":"C-band analog monolithic vector modulator","authors":"G. Burnsed, D. Kalcik, J. Sherman","doi":"10.1109/MCS.1995.470984","DOIUrl":"https://doi.org/10.1109/MCS.1995.470984","url":null,"abstract":"A novel circuit structure for a MMIC C-band analog vector modulator is described. It provides full 360 degree phase coverage with 50 dB amplitude range over an octave band. The MMIC die size is 70/spl times/70 mil.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116950762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently emerging lightwave communications technologies have resulted from the remarkable progress in electronic and photonic device technologies as well as in fiber-optic technology and coherent-transmission technology. This paper discusses the state-of-the-art design and measurement technologies for high-speed lightwave communication ICs.<>
{"title":"Lightwave communication ICs beyond 10 Gb/s-design and measurement challenges","authors":"T. Otsuji, Y. Imai, E. Sano","doi":"10.1109/MCS.1995.471001","DOIUrl":"https://doi.org/10.1109/MCS.1995.471001","url":null,"abstract":"Recently emerging lightwave communications technologies have resulted from the remarkable progress in electronic and photonic device technologies as well as in fiber-optic technology and coherent-transmission technology. This paper discusses the state-of-the-art design and measurement technologies for high-speed lightwave communication ICs.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121381042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<>
{"title":"Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier","authors":"Sang-Gug Lee, R. D. Schultz","doi":"10.1109/MCS.1995.470989","DOIUrl":"https://doi.org/10.1109/MCS.1995.470989","url":null,"abstract":"Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124385917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz
A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<>
{"title":"A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier","authors":"G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz","doi":"10.1109/MCS.1995.470990","DOIUrl":"https://doi.org/10.1109/MCS.1995.470990","url":null,"abstract":"A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new GaAs device developed for use in microwave monolithic control circuitry has been demonstrated. Known as a CFET, for Control Field Effect Transistor, this device eliminates the need for a conventional submicron gate by achieving control by use of a gate located behind the source-drain channel. The resulting capacitance is smaller than a conventional MESEET, resulting in a figure of merit of 800 GHz as compared to 250 GHz for a conventional MESFET. The device capabilities are demonstrated by measured performance of a SPDT switch providing 0.35-dB insertion loss and 20-dB isolation over the DC -10.0-GHz frequency band.<>
{"title":"CFET-a new high quality MMIC control device","authors":"D. Seymour, R. Coats, R. Lehmann, J. Helvey","doi":"10.1109/MCS.1995.470983","DOIUrl":"https://doi.org/10.1109/MCS.1995.470983","url":null,"abstract":"A new GaAs device developed for use in microwave monolithic control circuitry has been demonstrated. Known as a CFET, for Control Field Effect Transistor, this device eliminates the need for a conventional submicron gate by achieving control by use of a gate located behind the source-drain channel. The resulting capacitance is smaller than a conventional MESEET, resulting in a figure of merit of 800 GHz as compared to 250 GHz for a conventional MESFET. The device capabilities are demonstrated by measured performance of a SPDT switch providing 0.35-dB insertion loss and 20-dB isolation over the DC -10.0-GHz frequency band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"2011 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127374921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Nakatsuka, J. Itoh, S. Yamamoto, T. Yoshida, M. Nishitsuji, T. Uda, K. Nishii, O. Ishikawa
A highly miniaturized and low power consumption receiver front-end hybrid IC(HIC) including input matching circuits for 880 MHz bands using on-chip high-dielectric constant (/spl epsi//sub r/) capacitors has been newly developed. The HIC is composed of a GaAs IC chip and a ceramic substrate with spiral inductors on its surface. The HIC showed conversion gain of 20.2 dB and noise figure of 4.2 dB at supply voltage of 2.7 V and dissipation current of 3.7 mA. The HIC measures only 5.0 mm/spl times/5.0 mm/spl times/1.0 mm.<>
{"title":"A highly miniaturized receiver front-end hybrid IC using on-chip high-dielectric constant capacitors for mobile communication equipment","authors":"T. Nakatsuka, J. Itoh, S. Yamamoto, T. Yoshida, M. Nishitsuji, T. Uda, K. Nishii, O. Ishikawa","doi":"10.1109/MCS.1995.470985","DOIUrl":"https://doi.org/10.1109/MCS.1995.470985","url":null,"abstract":"A highly miniaturized and low power consumption receiver front-end hybrid IC(HIC) including input matching circuits for 880 MHz bands using on-chip high-dielectric constant (/spl epsi//sub r/) capacitors has been newly developed. The HIC is composed of a GaAs IC chip and a ceramic substrate with spiral inductors on its surface. The HIC showed conversion gain of 20.2 dB and noise figure of 4.2 dB at supply voltage of 2.7 V and dissipation current of 3.7 mA. The HIC measures only 5.0 mm/spl times/5.0 mm/spl times/1.0 mm.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116156386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Tran, J. Cowles, T. Block, Huei Wang, J. Yonaki, D. Lo, S. Dow, B. Allen, D. Streit, A. Oki, S. Loughran
Monolithic VCOs and mixers have been developed for Q-band FMCW transceiver applications using an InP-based HBT process. Tuning range, output power, and phase noise have been characterized for the HBT VCOs, while conversion loss and noise figure were measured for the Schottky diode mixers. The VCO shows 10-dB better phase noise performance over a similar design based on a GaAs HBT process. Measured at very low IF, the InP-based Schottky diode mixer demonstrates more than 1 dB noise figure improvement over the same design based on GaAs Schottky process. The InP mixer also requires a very low LO power at only 1 dBm for a 8-dB conversion loss.<>
{"title":"Monolithic VCO and mixer for Q-band transceiver using InP-based HBT process","authors":"L. Tran, J. Cowles, T. Block, Huei Wang, J. Yonaki, D. Lo, S. Dow, B. Allen, D. Streit, A. Oki, S. Loughran","doi":"10.1109/MCS.1995.470981","DOIUrl":"https://doi.org/10.1109/MCS.1995.470981","url":null,"abstract":"Monolithic VCOs and mixers have been developed for Q-band FMCW transceiver applications using an InP-based HBT process. Tuning range, output power, and phase noise have been characterized for the HBT VCOs, while conversion loss and noise figure were measured for the Schottky diode mixers. The VCO shows 10-dB better phase noise performance over a similar design based on a GaAs HBT process. Measured at very low IF, the InP-based Schottky diode mixer demonstrates more than 1 dB noise figure improvement over the same design based on GaAs Schottky process. The InP mixer also requires a very low LO power at only 1 dBm for a 8-dB conversion loss.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130197268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<>
{"title":"Ultra-low DC power GaAs HBT S-band low noise amplifiers","authors":"K. Kobayashi, A. Oki, L. Tran, D. Streit","doi":"10.1109/MCS.1995.470988","DOIUrl":"https://doi.org/10.1109/MCS.1995.470988","url":null,"abstract":"We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"443 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116513982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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