Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology

Abstract

High frequency power applications such as radar, terrestrial and space communications, and signal jamming are increasingly adopting GaN devices. RF GaN market growth is driven significantly by 5G today. This paper describes the modelling approaches used for GaN based devices and associated RF passives for an MMIC technology which can be used by circuit designers to quickly model newly fabricated devices. It presents a look-up table based approach for modelling the GaN device and a semi-empirical approach to model the RF passives. A class-A broadband power amplifier has also been presented to verify and show the utility of the model.