Evaluation of Critical Surface Cleanliness by Secondary Ion Mass Spectroscopy

R. Lowry, R. Masters
{"title":"Evaluation of Critical Surface Cleanliness by Secondary Ion Mass Spectroscopy","authors":"R. Lowry, R. Masters","doi":"10.1109/IRPS.1981.362988","DOIUrl":null,"url":null,"abstract":"Surfaces of a wide variety of IC materials, from raw silicon wafers to package piece parts, must be ultra-clean prior to key manufacturing steps to assure reliable performance of the finished devices. Knowledge of surface cleanliness is essential for optimum process design. Secondary ion mass spectroscopy (SIMS) is utilized to define levels of impurities on critical surfaces at various stages of device manufacture.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Surfaces of a wide variety of IC materials, from raw silicon wafers to package piece parts, must be ultra-clean prior to key manufacturing steps to assure reliable performance of the finished devices. Knowledge of surface cleanliness is essential for optimum process design. Secondary ion mass spectroscopy (SIMS) is utilized to define levels of impurities on critical surfaces at various stages of device manufacture.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
二次离子质谱法评价临界表面清洁度
从原始硅片到封装件零件,各种IC材料的表面必须在关键制造步骤之前进行超清洁,以确保成品器件的可靠性能。了解表面清洁度对优化工艺设计至关重要。二次离子质谱(SIMS)用于确定设备制造各个阶段关键表面上的杂质水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
NMOS Voltage Breakdown Characteristics Compared with Accelerated Life Tests and Field use Data The Effect of Insulation Coatings on Forward Beta Degradation in Bipolar Transistors The use of Silicone RTV Rubber for Alpha Particle Protection on Silicon Integrated Circuits Reliability of DH Ga1-XAlX As LEDs For Lightwave Communications A Method of Detecting Hot Spots on Semiconductors using Liquid Crystals
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1