A microelectronic test structure for signal integrity characterization in deep submicron technology

F. Caignet, S. Dhia, E. Sicard
{"title":"A microelectronic test structure for signal integrity characterization in deep submicron technology","authors":"F. Caignet, S. Dhia, E. Sicard","doi":"10.1109/ICMTS.2000.844407","DOIUrl":null,"url":null,"abstract":"The benefits expected by the decreases of feature sizes in high-speed electronic's circuits are limited by the increased parasitic effects of interconnect. This paper details the application of an on-chip time domain technique to the characterization of propagation delay, crosstalk and crosstalk-induced delay, along interconnects in deep submicron technology. The measurement system is detailed, together with the signal integrity patterns and their implementation in 0.18 CMOS technology. Measurement obtained with this technique are presented and compared with simulations.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The benefits expected by the decreases of feature sizes in high-speed electronic's circuits are limited by the increased parasitic effects of interconnect. This paper details the application of an on-chip time domain technique to the characterization of propagation delay, crosstalk and crosstalk-induced delay, along interconnects in deep submicron technology. The measurement system is detailed, together with the signal integrity patterns and their implementation in 0.18 CMOS technology. Measurement obtained with this technique are presented and compared with simulations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种用于深亚微米技术信号完整性表征的微电子测试结构
在高速电子电路中,特征尺寸减小所带来的好处受到互连的寄生效应增加的限制。本文详细介绍了片上时域技术在表征深亚微米技术中沿互连的传播延迟、串扰和串扰诱发延迟方面的应用。详细介绍了测量系统,以及信号完整性模式及其在0.18 CMOS技术上的实现。给出了用该技术得到的测量结果,并与仿真结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Rapid evaluation of the root causes of BJT mismatch Ground-shielded measuring technique for accurate on-wafer characterization of RF CMOS devices Characterization and modeling of LDMOS transistors on a 0.6 /spl mu/m CMOS technology Comparing high-frequency de-embedding strategies: immittance correction and in-situ calibration High-spatial-frequency MOS transistor gate length variations in SRAM circuits
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1