Effect of AlGaN Back Barrier on InAlN/AlN/GaN E-Mode HEMTs

Sarosij Adak, Nisarga Chand, S. Swain, A. Sarkar
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引用次数: 3

Abstract

This paper reports the effect of AlGaN back barrier on the performance of lattice matched In0.17Al0.83N/AlN/GaN Recess Gate E HEMT Device. The use of AlGaN back barrier on this device relaxes the GaN channel, which in turn limits the SCEs. Moreover reduced the leakage current through gate (Ig) and simultaneously improves carrier confinement and off state breakdown voltage. The numerical modeling are carried out with the help of 2D Sentaurus TCAD simulator using Hydrodynamic model, which is standardized with respect to already published fabricated results. Different performance parameters are studied using the simulations and a wide comparison was done with and without considering AlGaN back barrier (BB). Addition of AlGaN BB has added benefits in performance parameters w.r.t without BB i.e. threshold voltage raised to 0.93 volt with respect to 0.75 volt, drop in DIBL from 100mv/V to 36mv/V and substantial reduction in gate leakage current. These results reveal that use of AlGaN BB in such devices can be an alternative solution for high power and high frequency switching applications.
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AlGaN后阻挡层对InAlN/AlN/GaN E-Mode hemt的影响
本文报道了AlGaN背势垒对晶格匹配In0.17Al0.83N/AlN/GaN凹槽栅E - HEMT器件性能的影响。在该器件上使用AlGaN背障使GaN通道松弛,从而限制了sce。减小了栅极漏电流(Ig),同时提高了载流子约束和断态击穿电压。利用二维Sentaurus TCAD模拟器进行数值模拟,采用流体动力学模型,并在已有的模拟结果基础上进行了标准化。通过仿真研究了不同的性能参数,并对是否考虑AlGaN背障(BB)进行了广泛的比较。添加AlGaN BB在性能参数方面有额外的好处,即阈值电压从0.75伏提高到0.93伏,DIBL从100mv/V降至36mv/V,栅极泄漏电流大幅降低。这些结果表明,在这些器件中使用AlGaN BB可以成为高功率和高频开关应用的替代解决方案。
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