A. Umezawa, S. Atsumi, M. Kuriyama, H. Banba, C. Hoshino, K. Naruke, S. Yamada, Y. Ohshima, M. Oshikiri, Y. Hiura, T. Suzuki, K. Yoshikawa
{"title":"A new self-data-refresh scheme for a sector erasable 16-Mb flash EEPROM","authors":"A. Umezawa, S. Atsumi, M. Kuriyama, H. Banba, C. Hoshino, K. Naruke, S. Yamada, Y. Ohshima, M. Oshikiri, Y. Hiura, T. Suzuki, K. Yoshikawa","doi":"10.1109/VLSIC.1993.920560","DOIUrl":null,"url":null,"abstract":"A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.","PeriodicalId":127467,"journal":{"name":"Symposium 1993 on VLSI Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1993 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1993.920560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.
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