J. Pusl, B. Agarwal, R. Pullela, L. Nguyen, M. Le, M. Rodwell, L. Larson, J. Jensen, R. Yu, M. Case
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引用次数: 29
Abstract
We report capacitive-division traveling-wave amplifiers having measured midband gains of 8 dB with a 1-98 GHz 3-dB-bandwidth, and 11 dB gain with a 1-96 GHz bandwidth. The capacitive-division topology raises the input Q of each cell, giving the amplifier increased bandwidth over conventional designs with the same active device technology; using 0.15-/spl mu/m gate length InGaAs/InAlAs HEMTs, bandwidths exceeding 150 GHz are feasible.<>
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