N. Hefyene, J. Sallese, C. Anghel, Adrian M. Ionescu, S. Frere, Renaud Gillon
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引用次数: 9
Abstract
This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.
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