{"title":"Simulation of high-speed single-electron memory","authors":"H. Mizuta, K. Katayama, H. Muller, D. Williams","doi":"10.1109/IWCE.1998.742696","DOIUrl":null,"url":null,"abstract":"A novel lateral single electron memory (L-SEM) architecture and its high-speed write operation were demonstrated with a write time comparable to conventional DRAMs. Excellent subthreshold characteristics of the sense MOSFET with split gates were also presented. The robustness of the L-SEM cell structure was also discussed in terms of the offset charge issue.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A novel lateral single electron memory (L-SEM) architecture and its high-speed write operation were demonstrated with a write time comparable to conventional DRAMs. Excellent subthreshold characteristics of the sense MOSFET with split gates were also presented. The robustness of the L-SEM cell structure was also discussed in terms of the offset charge issue.
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