Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742723
N. Sano, K. Natori, M. Mukai, K. Matsuzawa
Monte Carlo analyses of the current fluctuation in Si n-i-n structures have been carried out by varying the length of the i (channel) region so that the diffusive to quasi-ballistic transport is covered. It has been demonstrated that the current fluctuation is dominated by thermal noise at low bias regions and makes a direct transition to hot carrier noise in moderately large devices. On the other hand, a new fluctuation mode appears under sub-0.1 micron device structures. This is associated with the fluctuation of the electron number in the i (channel) region and results from both the ballistic electrons emitted from the left n (source) region and the electrons diffused from the right n (drain) region.
{"title":"Physical mechanism of current fluctuation under ultra-small device structures","authors":"N. Sano, K. Natori, M. Mukai, K. Matsuzawa","doi":"10.1109/IWCE.1998.742723","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742723","url":null,"abstract":"Monte Carlo analyses of the current fluctuation in Si n-i-n structures have been carried out by varying the length of the i (channel) region so that the diffusive to quasi-ballistic transport is covered. It has been demonstrated that the current fluctuation is dominated by thermal noise at low bias regions and makes a direct transition to hot carrier noise in moderately large devices. On the other hand, a new fluctuation mode appears under sub-0.1 micron device structures. This is associated with the fluctuation of the electron number in the i (channel) region and results from both the ballistic electrons emitted from the left n (source) region and the electrons diffused from the right n (drain) region.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114273926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742735
H. Tsuchiya, T. Miyoshi
The dynamic particle trajectories of a resonant-tunneling structure at large bias conditions are investigated based upon the phase space description in the Wigner distribution function. The procedure for the Wigner trajectory calculation is presented in detail. We demonstrate the dynamic behaviors of the quantum tunneling trajectories and the steady-state tunneling times, corresponding with the transmission coefficient spectra and the classical particle trajectories. The Wigner trajectory technique presented in this paper can provide an instructive description of carrier nonequilibrium quantum transport distinct from the conventional carrier statistics such as carrier density and current density distributions. Thus, it will be available to understand the dynamic behaviors of various nanostructure devices.
{"title":"Simulation of dynamic particle trajectories through resonant-tunneling structures based upon Wigner distribution function","authors":"H. Tsuchiya, T. Miyoshi","doi":"10.1109/IWCE.1998.742735","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742735","url":null,"abstract":"The dynamic particle trajectories of a resonant-tunneling structure at large bias conditions are investigated based upon the phase space description in the Wigner distribution function. The procedure for the Wigner trajectory calculation is presented in detail. We demonstrate the dynamic behaviors of the quantum tunneling trajectories and the steady-state tunneling times, corresponding with the transmission coefficient spectra and the classical particle trajectories. The Wigner trajectory technique presented in this paper can provide an instructive description of carrier nonequilibrium quantum transport distinct from the conventional carrier statistics such as carrier density and current density distributions. Thus, it will be available to understand the dynamic behaviors of various nanostructure devices.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"421 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116183037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742731
M. Girlanda, M. Governale, M. Macucci, G. Iannaccone
We have investigated the behavior of a quantum cellular automaton cell made up of four quantum dots, in response to the electric field due to a nearby driver cell. We have implemented a simulation based on the single-shot configuration interaction technique, and we have studied the behavior of the cell for a number of electrons variable between 2 and 6. Our results support the conjecture that proper QCA operation can be obtained with a number of electrons per cell corresponding to 4N+2.
{"title":"Configuration-interaction based simulation of a quantum cellular automaton cell","authors":"M. Girlanda, M. Governale, M. Macucci, G. Iannaccone","doi":"10.1109/IWCE.1998.742731","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742731","url":null,"abstract":"We have investigated the behavior of a quantum cellular automaton cell made up of four quantum dots, in response to the electric field due to a nearby driver cell. We have implemented a simulation based on the single-shot configuration interaction technique, and we have studied the behavior of the cell for a number of electrons variable between 2 and 6. Our results support the conjecture that proper QCA operation can be obtained with a number of electrons per cell corresponding to 4N+2.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127635367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742696
H. Mizuta, K. Katayama, H. Muller, D. Williams
A novel lateral single electron memory (L-SEM) architecture and its high-speed write operation were demonstrated with a write time comparable to conventional DRAMs. Excellent subthreshold characteristics of the sense MOSFET with split gates were also presented. The robustness of the L-SEM cell structure was also discussed in terms of the offset charge issue.
{"title":"Simulation of high-speed single-electron memory","authors":"H. Mizuta, K. Katayama, H. Muller, D. Williams","doi":"10.1109/IWCE.1998.742696","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742696","url":null,"abstract":"A novel lateral single electron memory (L-SEM) architecture and its high-speed write operation were demonstrated with a write time comparable to conventional DRAMs. Excellent subthreshold characteristics of the sense MOSFET with split gates were also presented. The robustness of the L-SEM cell structure was also discussed in terms of the offset charge issue.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115795863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742701
M. Ishida, M. Yamaguchi, N. Sawaki
The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.
{"title":"Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk","authors":"M. Ishida, M. Yamaguchi, N. Sawaki","doi":"10.1109/IWCE.1998.742701","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742701","url":null,"abstract":"The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114435919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742759
D. Ting, T. C. Mcgill
The current-voltage characteristics of n/sup +/ poly-Si/SiO/sub 2//p-Si tunnel structures containing nano-scale filaments embedded in ultra-thin oxide layers are analyzed using a 3D quantum mechanical scattering calculation. We find that the filaments act as highly efficient localized conduction paths and can lead to dramatic increases in current densities. By using progressively larger filaments, we can reproduce a range of stress-induced behavior found in experimental current-voltage characteristics, including quasi-breakdown and breakdown. We also find that at below flat-band, the current densities in structures with long filaments are greatly enhanced by resonant tunneling through states identified as quantum dots, and that this current enhancement is highly temperature dependent.
{"title":"Transport analysis of filamentary dielectric breakdown model for metal-oxide-semiconductor tunnel structures","authors":"D. Ting, T. C. Mcgill","doi":"10.1109/IWCE.1998.742759","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742759","url":null,"abstract":"The current-voltage characteristics of n/sup +/ poly-Si/SiO/sub 2//p-Si tunnel structures containing nano-scale filaments embedded in ultra-thin oxide layers are analyzed using a 3D quantum mechanical scattering calculation. We find that the filaments act as highly efficient localized conduction paths and can lead to dramatic increases in current densities. By using progressively larger filaments, we can reproduce a range of stress-induced behavior found in experimental current-voltage characteristics, including quasi-breakdown and breakdown. We also find that at below flat-band, the current densities in structures with long filaments are greatly enhanced by resonant tunneling through states identified as quantum dots, and that this current enhancement is highly temperature dependent.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130974437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742721
C. Jungemann, M. Bartels, S. Keith, B. Meinerzhagen
Methods are presented, which allow the efficient calculation of equilibrium and near-equilibrium transport properties in conjunction with an full band structure evaluated by a nonlocal empirical pseudopotential method. These methods are not only applied to the case of transport parameter calibration, but are also used for the extraction of transport coefficients for hydrodynamic models.
{"title":"Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure","authors":"C. Jungemann, M. Bartels, S. Keith, B. Meinerzhagen","doi":"10.1109/IWCE.1998.742721","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742721","url":null,"abstract":"Methods are presented, which allow the efficient calculation of equilibrium and near-equilibrium transport properties in conjunction with an full band structure evaluated by a nonlocal empirical pseudopotential method. These methods are not only applied to the case of transport parameter calibration, but are also used for the extraction of transport coefficients for hydrodynamic models.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131268906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742719
J. Watling, A. Asenov, J. Barker
An analytical geometric model for the valence band in strained and relaxed Si/sub 1-x/Ge/sub x/ is presented, which shows good agreement with a 6-band k/spl middot/p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.
{"title":"Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs","authors":"J. Watling, A. Asenov, J. Barker","doi":"10.1109/IWCE.1998.742719","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742719","url":null,"abstract":"An analytical geometric model for the valence band in strained and relaxed Si/sub 1-x/Ge/sub x/ is presented, which shows good agreement with a 6-band k/spl middot/p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133081582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742733
F. Vázquez, M. Ogura, A. Strachan, R. Cottle
The need for adequate simulations of quantum transport in semiconductor heterostructures has become more and more important as new advances in processing techniques have permitted the fabrication of devices that are expected to be controlled by quantum phenomena. Here we use a model based on the quantum moment equations derived from the Wigner distribution function to simulate a double barrier structure in two dimensions. The expected negative resistance effect is clearly seen in the current vs voltage characteristics of the device at 300 K. Other information, such as the electron concentration, can also be obtained with this method.
{"title":"Two-dimensional simulation of negative resistance effects using quantum moment equations","authors":"F. Vázquez, M. Ogura, A. Strachan, R. Cottle","doi":"10.1109/IWCE.1998.742733","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742733","url":null,"abstract":"The need for adequate simulations of quantum transport in semiconductor heterostructures has become more and more important as new advances in processing techniques have permitted the fabrication of devices that are expected to be controlled by quantum phenomena. Here we use a model based on the quantum moment equations derived from the Wigner distribution function to simulate a double barrier structure in two dimensions. The expected negative resistance effect is clearly seen in the current vs voltage characteristics of the device at 300 K. Other information, such as the electron concentration, can also be obtained with this method.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114146211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742707
A. Asenov, A. R. Brown, S. Roy
This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in the simulation of various devices, the generation of structured topologically rectangular 2D and 3D finite element grids and the optimisation of their partitioning using simulated annealing techniques. The development of efficient and scalable parallel solvers is a central issue of parallel simulations and the design of parallel SOR, conjugate gradient and multigrid solvers is discussed. The domain decomposition approach is illustrated in examples ranging from 'atomistic' simulation of decanano MOSFETs to simulation of power IGBTs rated for 1000 V.
{"title":"Parallel semiconductor device simulation: from power to 'atomistic' devices","authors":"A. Asenov, A. R. Brown, S. Roy","doi":"10.1109/IWCE.1998.742707","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742707","url":null,"abstract":"This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in the simulation of various devices, the generation of structured topologically rectangular 2D and 3D finite element grids and the optimisation of their partitioning using simulated annealing techniques. The development of efficient and scalable parallel solvers is a central issue of parallel simulations and the design of parallel SOR, conjugate gradient and multigrid solvers is discussed. The domain decomposition approach is illustrated in examples ranging from 'atomistic' simulation of decanano MOSFETs to simulation of power IGBTs rated for 1000 V.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115901655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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