Novel CMOS and PTL Based Half Subtractor Designs

Anju Rajput, Tripti Dua, R. Kumawat, Avireni Srinivasulu
{"title":"Novel CMOS and PTL Based Half Subtractor Designs","authors":"Anju Rajput, Tripti Dua, R. Kumawat, Avireni Srinivasulu","doi":"10.1109/iSES52644.2021.00047","DOIUrl":null,"url":null,"abstract":"In the wake of stretched need for movable, light weighted and battery wielded devices, diminishing power consumption, increasing area efficiency and increasing speed of the devices are the foremost crucial factors at present. This paper includes proposals for 16T and 8T half subtractor designs and as they are contrasted with the existing 14T half subtractor design. Simulation of the proposed designs are carried out at various supply voltages i.e., 0. 6V, 0.7V and 0. 8V and in different technologies which are 45nm, 32nm and 16nm technologies which indicate that the proposed designs are technology independent as well. Comparative research communicates that the proposed designs perform better and also yield better results with regards to power dissipation and transistor count as well.","PeriodicalId":293167,"journal":{"name":"2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iSES52644.2021.00047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In the wake of stretched need for movable, light weighted and battery wielded devices, diminishing power consumption, increasing area efficiency and increasing speed of the devices are the foremost crucial factors at present. This paper includes proposals for 16T and 8T half subtractor designs and as they are contrasted with the existing 14T half subtractor design. Simulation of the proposed designs are carried out at various supply voltages i.e., 0. 6V, 0.7V and 0. 8V and in different technologies which are 45nm, 32nm and 16nm technologies which indicate that the proposed designs are technology independent as well. Comparative research communicates that the proposed designs perform better and also yield better results with regards to power dissipation and transistor count as well.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于CMOS和PTL的新型半减法器设计
随着人们对可移动、轻量化和电池驱动设备的需求不断扩大,降低设备功耗、提高设备面积效率和提高设备速度是当前最重要的因素。本文提出了16T和8T半减速器的设计方案,并与现有的14T半减速器设计进行了对比。所提出的设计在不同的电源电压下进行了仿真,即0。6V、0.7V、0。8V和不同的45nm、32nm和16nm技术,这表明所提出的设计也是技术独立的。比较研究表明,所提出的设计性能更好,并且在功耗和晶体管数量方面也产生更好的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Implementation of Self-Controlled Wheelchairs based on Joystick, Gesture Motion and Voice Recognition Dynamic Two Hand Gesture Recognition using CNN-LSTM based networks Performance Assessment of Dual Metal Graded Channel Negative Capacitance Junctionless FET for Digital/Analog field VLSI Architecture of Sigmoid Activation Function for Rapid Prototyping of Machine Learning Applications. Influence of Nanosilica in PVDF Thin Films for Sensing Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1