Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964374
S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell
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引用次数: 5

Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.
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转移衬底InP/InGaAs/InP双异质结双极晶体管，f/sub max/=425 GHz
采用转移衬底技术，研究了功率增益截止频率f/sub max/=425 GHz，电流增益截止频率f/sub t/=141 GHz的InP/InGaAs/InP双异质结双极晶体管(DHBT)。这是DHBT报告的最高f/sub max/。击穿电压BV/sub CEO/为8 V, J/sub C/=5/spl乘以/10/sup 4/ A/cm/sup 2/，直流电流增益/spl beta/为43。
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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)
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