K. Cai, S. V. Beek, S. Rao, K. Fan, M. Gupta, V. Nguyen, G. Jayakumar, G. Talmelli, S. Couet, G. Kar
{"title":"Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories","authors":"K. Cai, S. V. Beek, S. Rao, K. Fan, M. Gupta, V. Nguyen, G. Jayakumar, G. Talmelli, S. Couet, G. Kar","doi":"10.1109/vlsitechnologyandcir46769.2022.9830307","DOIUrl":null,"url":null,"abstract":"We demonstrate a multi-pillar (MP) spin-orbit torque (SOT)-MRAM concept, which enables lower write current and high-density integration. We experimentally demonstrate the selective write operation of multi-bits in CMOS-compatible 300mm integrated top-pinned perpendicular MTJs. Multiple MTJs on a shared SOT track can be individually selected by gate voltages and independently switched by sub-ns pulses with 30% reduction in operation current. Our concept of selective operations with less transistors and lower writing energy will significantly enhance the density and energy efficiency of SOT-MRAM.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We demonstrate a multi-pillar (MP) spin-orbit torque (SOT)-MRAM concept, which enables lower write current and high-density integration. We experimentally demonstrate the selective write operation of multi-bits in CMOS-compatible 300mm integrated top-pinned perpendicular MTJs. Multiple MTJs on a shared SOT track can be individually selected by gate voltages and independently switched by sub-ns pulses with 30% reduction in operation current. Our concept of selective operations with less transistors and lower writing energy will significantly enhance the density and energy efficiency of SOT-MRAM.