Bo-Ze Lu, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin, Huei Wang
{"title":"A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications","authors":"Bo-Ze Lu, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin, Huei Wang","doi":"10.1109/EuMIC48047.2021.00049","DOIUrl":null,"url":null,"abstract":"A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than −25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EuMIC48047.2021.00049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than −25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability