A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications

Bo-Ze Lu, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin, Huei Wang
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Abstract

A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than −25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability
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5G通信用90纳米CMOS工艺28 ghz高线性高效f类功率放大器
介绍了一种用于5G通信的90纳米CMOS工艺的28 ghz f类功率放大器。该PA是由两个公共源单元组成的差分对拓扑结构。为了提高效率,构建了谐波调谐网络。所提出的f类放大器以7.4 GHz 3db带宽(25.1-32.5 GHz)实现12db小信号增益,饱和输出功率(Psat)为14.9 dBm,峰值PAE为43.8%,输出1-dB压缩点(OP1dB)为14.0 dBm, PAE为42.0% 28ghz。采用单载波64-QAM信号调制测量结果,该放大器实现了2.1/4.2 Gb/s的数据速率、10.6 dbm /8.1 dbm的平均输出功率和29.5%/22.6%的平均PAE,同时保持均方根误差矢量幅度(EVM)优于- 25 dB。在所有已发表的毫米波CMOS放大器中,该放大器表现出出色的大信号性能和卓越的调制能力
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