Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang
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引用次数: 0
Abstract
The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target
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