Sub-0.1-/spl mu/m Patterning Characteristics of Inorganic Resists by Focused-Ion-Beam Lithography

S. Paek, Soo‐Ho Park, Hyun-Yong Lee, H. Chung
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Abstract

Every year, m and more, many Focused-ion-be characteristics of various importan we anticipate tha lon-bcan litho] for sub-0.lpm ell patterns or mas1 obtain a clear-an water vapors as development is i the undercutting recently present< Carlo(MC) simL penetration into In previous F characteristics, ti exposure and by duality according on the energy dj case of RIE dev The Zmin optir resists, respectiv ,?,,,-thick inorga Though these process, high c( sensitivity 1-2 ( be solved, espec As one study the columnar-sti development. Tl15C-6-18
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聚焦离子束光刻技术研究无机抗蚀剂在0.1-/spl μ m以下的图案特征
每年都有许多重要的焦点特征,我们预计会有10亿美元的岩石。lpm井模式或mas1获得一个清晰的水蒸汽作为开发是在最近出现的< Carlo(MC) simL渗透到以前的F特性,ti暴露和由对偶根据能量的情况下RIE开发的Zmin光学电阻,分别,?通过这些工艺,解决了高c(1-2)灵敏度的问题,特别是在研究柱状体发育的过程中。Tl15C-6-18
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