Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730002
S. Mitsui, Y. Tanaka, T. Taguchi, Y. Gomei, T. Hisatsugu
{"title":"Evaluation of Image Shortening Effects with Rectangular Array Patterns in X-Ray Lithography","authors":"S. Mitsui, Y. Tanaka, T. Taguchi, Y. Gomei, T. Hisatsugu","doi":"10.1109/IMNC.1998.730002","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730002","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123125028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730112
T. Yunogami, T. Kumihashi
{"title":"Sub-Quarter-Micron PT Etching Technology Using Round Head EB Resist","authors":"T. Yunogami, T. Kumihashi","doi":"10.1109/IMNC.1998.730112","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730112","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127118989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.729920
K. Suzuki
Several forms o f lithography, such as x-ray lithography (XRL), projection electron beam lithography (SCALPEL), and projection ion-beam lithography (IPL), are now being developed for sub-0.1 -pm-rule ULSl fabrication. The common feature of these technologies is t ha t they use membraneo r stencil-masks. Among them, the x-ray mask is the simplest and most compact, which are advantages fo r practical use. Recent experimental and simulation data indicates that XRL may allow a practical throughput as high as 50 wafers (48’’ ) per hour. In addition, XRL provides a very large process margin and is insensitive t o sub-0.1-pm dust. These superior characteristics will enable low cost fabrication of ULSl in the future. On the other hand, the pattern-placement accuracy required for x-ray masks used fo r sub-0.1-pm device fabrication is less than f10 nm. The field size required for such device fabrication is expected t o be about 25 X 4 0 mm, as described in the SIA Roadmap.’ Such pattern-placement accuracy corresponds t o mask distortion of less than 0.5 ppm. Among the several key issues concerning x-ray lithography technology, the development of such high precision x-ray masks is the f i rs t priority. For this reason, a great deal of research and development aimed a t both x-ray mask materials and the fabrication processes has been carried out. Owing t o such efforts, very promising x-ray mask materials and mask-fabrication processes, which will make 0.1 -pm-ULSI fabrication a reality, have been developed. In this paper, we will report the recent progress in x-ray mask materials, such as the development of lowand uniform-stress x-ray absorbers (amorphous TaGe’ or TaReGe3), extremely low stress CrN hard-masks4, and high Young’s modulus radiation-resistant membranes. We will also review the progress of key instruments, such as a compact synchrotron with normal-conducting magnet, high-transmission efficiency and uniform beamlines, and high-throughput x-ray steppers. We will then examine the remaining issues, and discuss what sti l l has t o be done t o put x-ray lithography into mass production.
{"title":"X-Ray Lithography: Recent Progress And Future Developments","authors":"K. Suzuki","doi":"10.1109/IMNC.1998.729920","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729920","url":null,"abstract":"Several forms o f lithography, such as x-ray lithography (XRL), projection electron beam lithography (SCALPEL), and projection ion-beam lithography (IPL), are now being developed for sub-0.1 -pm-rule ULSl fabrication. The common feature of these technologies is t ha t they use membraneo r stencil-masks. Among them, the x-ray mask is the simplest and most compact, which are advantages fo r practical use. Recent experimental and simulation data indicates that XRL may allow a practical throughput as high as 50 wafers (48’’ ) per hour. In addition, XRL provides a very large process margin and is insensitive t o sub-0.1-pm dust. These superior characteristics will enable low cost fabrication of ULSl in the future. On the other hand, the pattern-placement accuracy required for x-ray masks used fo r sub-0.1-pm device fabrication is less than f10 nm. The field size required for such device fabrication is expected t o be about 25 X 4 0 mm, as described in the SIA Roadmap.’ Such pattern-placement accuracy corresponds t o mask distortion of less than 0.5 ppm. Among the several key issues concerning x-ray lithography technology, the development of such high precision x-ray masks is the f i rs t priority. For this reason, a great deal of research and development aimed a t both x-ray mask materials and the fabrication processes has been carried out. Owing t o such efforts, very promising x-ray mask materials and mask-fabrication processes, which will make 0.1 -pm-ULSI fabrication a reality, have been developed. In this paper, we will report the recent progress in x-ray mask materials, such as the development of lowand uniform-stress x-ray absorbers (amorphous TaGe’ or TaReGe3), extremely low stress CrN hard-masks4, and high Young’s modulus radiation-resistant membranes. We will also review the progress of key instruments, such as a compact synchrotron with normal-conducting magnet, high-transmission efficiency and uniform beamlines, and high-throughput x-ray steppers. We will then examine the remaining issues, and discuss what sti l l has t o be done t o put x-ray lithography into mass production.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126950164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730063
S. Wang, Hyung‐Ho Park
Etching behavior of novel Si02 aerogel film for applying to interlevel dielectric in multilevel interconnections of ultra large-scale integration (ULSI) has been investigated. Recently, low dielectric property has been a critical issue for developing ULSl devices, because the device performance has been limited by signal delay and cross talk in the multilevel interconnections. Si02 aerogel film by sol-gel method and supercritical drying shows very low dielectric constant about 2. This low dielectric property is originated from its porous nature and network structure of Si02 aerogel film consists of a number of SiOR (R = alkoxy1 group) and Si-OH bonds and adsorbed water as surface terminal species. In application to multilevel structure, an understanding of its etching behavior IS indispensable matter Especially, different properties from thermally grown Si02, I e., porous nature and internal surface chemical bondings, must be considered during the etching process. Si02 aerogel films coated on Si wafer were used in high density inductively coupled plasma (ICP) etching experiment. Scanning electron microscopy (SEM) observation showed that microstructure of Si02 aerogel films was maintained during the etching process, as shown in Fig. 1. Interconnected network of Si02 aerogel was not changed under the attack of reactive species, even though the porous nature of the film seemed to enable the etching to be occurred inside of the film. Some factors have to be considered to play a role in blocking the etching inside of the film. Fig. 2 shows the conceivable etching model of Si02 aerogel particle compared with thermally grown Si02. It can be adaptable for Si02 aerogel to be etched 3 dimensionally other than planar, i.e., 2 dimensional etching of thermally grown Si02. Although the etching species transport through porous media, interconnected structure of aerogel particle must be guarded by surface terminal hydrogen bondings. The surface compositions of partially etched samples are given in Fig. 3 using X-ray photoelectron spectroscopy (XPS) with take-off angle variation. In this variation, contribution of surface component to the observed peak intensity increases with the decrease of take-off angle. In thermally grown Si02, a steep change in the composition with angles was observed. But with Si02 aerogel film, composition was not varied much with angles so it could be said that almost uniform composition-distribution was applied to the partially etched Si02 aerogel film within information depth of photoelectrons. This means that C-F polymer residue is uniformly formed inside of Si02 aerogel film and the etching of Si02 aerogel can be delayed by internal surface chemicals. In this work, gas transport phenomenon and reaction using CHF3 or C2F6 gas have been studied to investigate the role of hydrogen on the etching of Si02 aerogel film. The evolutions in physical and chemical properties of Si02 aerogel film during the etching were also evaluated.
{"title":"Effect Of Internal Surface Bondings On The Etching Of SiO2 Aerogel Film","authors":"S. Wang, Hyung‐Ho Park","doi":"10.1109/IMNC.1998.730063","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730063","url":null,"abstract":"Etching behavior of novel Si02 aerogel film for applying to interlevel dielectric in multilevel interconnections of ultra large-scale integration (ULSI) has been investigated. Recently, low dielectric property has been a critical issue for developing ULSl devices, because the device performance has been limited by signal delay and cross talk in the multilevel interconnections. Si02 aerogel film by sol-gel method and supercritical drying shows very low dielectric constant about 2. This low dielectric property is originated from its porous nature and network structure of Si02 aerogel film consists of a number of SiOR (R = alkoxy1 group) and Si-OH bonds and adsorbed water as surface terminal species. In application to multilevel structure, an understanding of its etching behavior IS indispensable matter Especially, different properties from thermally grown Si02, I e., porous nature and internal surface chemical bondings, must be considered during the etching process. Si02 aerogel films coated on Si wafer were used in high density inductively coupled plasma (ICP) etching experiment. Scanning electron microscopy (SEM) observation showed that microstructure of Si02 aerogel films was maintained during the etching process, as shown in Fig. 1. Interconnected network of Si02 aerogel was not changed under the attack of reactive species, even though the porous nature of the film seemed to enable the etching to be occurred inside of the film. Some factors have to be considered to play a role in blocking the etching inside of the film. Fig. 2 shows the conceivable etching model of Si02 aerogel particle compared with thermally grown Si02. It can be adaptable for Si02 aerogel to be etched 3 dimensionally other than planar, i.e., 2 dimensional etching of thermally grown Si02. Although the etching species transport through porous media, interconnected structure of aerogel particle must be guarded by surface terminal hydrogen bondings. The surface compositions of partially etched samples are given in Fig. 3 using X-ray photoelectron spectroscopy (XPS) with take-off angle variation. In this variation, contribution of surface component to the observed peak intensity increases with the decrease of take-off angle. In thermally grown Si02, a steep change in the composition with angles was observed. But with Si02 aerogel film, composition was not varied much with angles so it could be said that almost uniform composition-distribution was applied to the partially etched Si02 aerogel film within information depth of photoelectrons. This means that C-F polymer residue is uniformly formed inside of Si02 aerogel film and the etching of Si02 aerogel can be delayed by internal surface chemicals. In this work, gas transport phenomenon and reaction using CHF3 or C2F6 gas have been studied to investigate the role of hydrogen on the etching of Si02 aerogel film. The evolutions in physical and chemical properties of Si02 aerogel film during the etching were also evaluated.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114147405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, 0.3–0.5 µm deep silicon trenches were etched using Cl2/10%N2 and Cl2/50%HBr inductively coupled plasmas, and the defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. High resolution transmission electron microscopy was used to investigate the degree of remaining defects and X-ray photoelectron spectroscopy was also used to investigate surface contamination of the etched silicon wafers. Defects were found on the silicon trench surfaces etched using both Cl2/10%N2 and Cl2/50%HBr. A thermal oxidation of 200 A at the temperature up to 1,100°C did not remove the remaining defects completely and more defects were remained on the silicon trench etched using Cl2/10%N2. More defects remaining on the oxidized silicon trench for Cl2/10%N2 appear to be related to the formation of silicon oxynitride on the silicon trench etched in Cl2/10%N2, therefore, forming less thermal oxide during the oxidation process. The annealing of the etched silicon trenches from 900°C to 1,000°C for 30 min in N2 also decreased the number of defects, however, to remove the defects formed in our experiments, the annealings at the temperature higher than 1,000°C in N2 for 30 min appears to be required. A combination process of annealing at 1,000°C and oxidation at 900°C was also effective in removing the defects completely.
{"title":"Effects Of Post Annealing And Oxidation Processes On The Removal Of Damage Generated During The Shallow Trench Etch Process","authors":"Y.J. Lee, S. Hwang, J. Lee, J.Y. Lee, G. Yeom","doi":"10.1143/JJAP.37.6916","DOIUrl":"https://doi.org/10.1143/JJAP.37.6916","url":null,"abstract":"In this study, 0.3–0.5 µm deep silicon trenches were etched using Cl2/10%N2 and Cl2/50%HBr inductively coupled plasmas, and the defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. High resolution transmission electron microscopy was used to investigate the degree of remaining defects and X-ray photoelectron spectroscopy was also used to investigate surface contamination of the etched silicon wafers. Defects were found on the silicon trench surfaces etched using both Cl2/10%N2 and Cl2/50%HBr. A thermal oxidation of 200 A at the temperature up to 1,100°C did not remove the remaining defects completely and more defects were remained on the silicon trench etched using Cl2/10%N2. More defects remaining on the oxidized silicon trench for Cl2/10%N2 appear to be related to the formation of silicon oxynitride on the silicon trench etched in Cl2/10%N2, therefore, forming less thermal oxide during the oxidation process. The annealing of the etched silicon trenches from 900°C to 1,000°C for 30 min in N2 also decreased the number of defects, however, to remove the defects formed in our experiments, the annealings at the temperature higher than 1,000°C in N2 for 30 min appears to be required. A combination process of annealing at 1,000°C and oxidation at 900°C was also effective in removing the defects completely.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116617773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730058
Seoghyeong Lee, Sung‐Hoon Yang, Jeongwon Park, Jong-Wan Park
As the dirnensions of ULSl devices continue to shrink, the RC delay of long interconnections will limit the device high speed performance. In advance logic devices, the stack of the interlayer dielectrics has increased to five or six layers. One of the most effective ways to reduce the parasitic capacitance is using low dielectric constant materials for the interlayer dielectrics. Resent works have indicated that the incorporation of fluorine atoms in the plasma deposited silicon oxide can reduce the effective dielectric constant below 3.5. However, the dielectric constant of SiOF films increases monotonically when exposed to atmosphere because of the high water absorptivity. In an effort to prevent water absorption, SiO, and/or SIN capping layers on the SiOF were examined. However, these methods turned out to be insufficient for reducing the wiring delay, because the structure of the capped SiOF was not effective in decreasing the total capacitance between metal lines. Therefore, our research goal is to develop a surface modification technique by in-situ plasma treatment of SiOF films with low dielectric constant and low water absorptivity which do not need any capping layer. Also, in sub-half micron region, it is necessary to reduce the resistivity of interconnection materials for implementation of new matertals. Copper is a leading candidate because of its lower electrical resistivity and higher resistance to electromigration than aluminum. However, the high diffusivity of Cu atoms into Si0,-base interlayer dielectrics causes device failure. Thus the purpose of this research is to study the effect of post plasma treatment on the reliability of SiOF films for interlayer dielectrics in the multilevel interconnections of ULSls. Figure 1 shows that the angie-resolved XPS spectra of Fls after about 50A etching with various plasma treatment RF bias power. In the cases of 50 W and 150 W, fluorine atoms almost disappear at the top surface. The larger the plasma treated RF bias power, the deeper the fluorine desorbed region. Therefore, as the plasma treated RF power increases, the chemical properties of the plasma treated SiOF films near the top surface tend to resemble those of thermal oxides because of the reduction in the Si-F bonding in the films. The changes in the film density measured by RBS analysis and the refractive index by ellipsometry of the plasma treated SiOF films as a function of RF bias power are shown in Fig. 2 . The film density and refractive index both increase with increasing the RF bias power. The density of the film with RF bias power of 0 W is 1.927 g/cd and that of RF bias power of 150 W is 2.1 13 g/ c” which are lower than that of the thermally grown silicon oxide by about 15% and 7%, respectively. The change in the refractive index can be an indication of variation in important film properties, including the amount of polarizable species, composition and film density. Therefore, this results implies that the chemical compos
{"title":"Effect Of Post Plasma Treatment On Reliability Of ECRCVD SioF Films","authors":"Seoghyeong Lee, Sung‐Hoon Yang, Jeongwon Park, Jong-Wan Park","doi":"10.1109/IMNC.1998.730058","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730058","url":null,"abstract":"As the dirnensions of ULSl devices continue to shrink, the RC delay of long interconnections will limit the device high speed performance. In advance logic devices, the stack of the interlayer dielectrics has increased to five or six layers. One of the most effective ways to reduce the parasitic capacitance is using low dielectric constant materials for the interlayer dielectrics. Resent works have indicated that the incorporation of fluorine atoms in the plasma deposited silicon oxide can reduce the effective dielectric constant below 3.5. However, the dielectric constant of SiOF films increases monotonically when exposed to atmosphere because of the high water absorptivity. In an effort to prevent water absorption, SiO, and/or SIN capping layers on the SiOF were examined. However, these methods turned out to be insufficient for reducing the wiring delay, because the structure of the capped SiOF was not effective in decreasing the total capacitance between metal lines. Therefore, our research goal is to develop a surface modification technique by in-situ plasma treatment of SiOF films with low dielectric constant and low water absorptivity which do not need any capping layer. Also, in sub-half micron region, it is necessary to reduce the resistivity of interconnection materials for implementation of new matertals. Copper is a leading candidate because of its lower electrical resistivity and higher resistance to electromigration than aluminum. However, the high diffusivity of Cu atoms into Si0,-base interlayer dielectrics causes device failure. Thus the purpose of this research is to study the effect of post plasma treatment on the reliability of SiOF films for interlayer dielectrics in the multilevel interconnections of ULSls. Figure 1 shows that the angie-resolved XPS spectra of Fls after about 50A etching with various plasma treatment RF bias power. In the cases of 50 W and 150 W, fluorine atoms almost disappear at the top surface. The larger the plasma treated RF bias power, the deeper the fluorine desorbed region. Therefore, as the plasma treated RF power increases, the chemical properties of the plasma treated SiOF films near the top surface tend to resemble those of thermal oxides because of the reduction in the Si-F bonding in the films. The changes in the film density measured by RBS analysis and the refractive index by ellipsometry of the plasma treated SiOF films as a function of RF bias power are shown in Fig. 2 . The film density and refractive index both increase with increasing the RF bias power. The density of the film with RF bias power of 0 W is 1.927 g/cd and that of RF bias power of 150 W is 2.1 13 g/ c” which are lower than that of the thermally grown silicon oxide by about 15% and 7%, respectively. The change in the refractive index can be an indication of variation in important film properties, including the amount of polarizable species, composition and film density. Therefore, this results implies that the chemical compos","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128293875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730003
H.G. Lee, C. Jeong, S.Y. Lee, J. Ahn, K. Song, C.K. Park, Y. Jeon, D.H. Lee
{"title":"A Research On The Anisotropic Etching Of Tungsten-Nitride For X-Ray Mask","authors":"H.G. Lee, C. Jeong, S.Y. Lee, J. Ahn, K. Song, C.K. Park, Y. Jeon, D.H. Lee","doi":"10.1109/IMNC.1998.730003","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730003","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124622638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article is concerned with researching microdefect characteristics by phosphorus 1 MeV ion implantation and Rs, XTEM, SRP, SlMS for the RTA process was measured and simulated As the dose was higher, the Rp was lower When the dose were 1 x 10'3/cm', 5x lO"/cm', 1 x 10'4/m2, the Rp were 0 73," 08pm, 0 9 ~ respectively. As the RTA annealing time was longer, the maximum concentration position was deeper from the surface and the concentration was lower Before the RTA annealing was done, we could not find any defect But after the RTA annealing was done, we could observe the RTA annealing changed the micro-defects into the secondary defects And we recognized those defects are removed by 1050°C RTA annealing
{"title":"Study On Microdefect Characteristics Analysis By RTA in 1MeV P Ion Implantation for High Memory Devices","authors":"Byeong-Gyu Roh, Hee-Won Kang, So-Haeng Cho, Sung-Pyo Hong, Keom-Yong Eum, H. Oh","doi":"10.1109/IMNC.1998.730047","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730047","url":null,"abstract":"This article is concerned with researching microdefect characteristics by phosphorus 1 MeV ion implantation and Rs, XTEM, SRP, SlMS for the RTA process was measured and simulated As the dose was higher, the Rp was lower When the dose were 1 x 10'3/cm', 5x lO\"/cm', 1 x 10'4/m2, the Rp were 0 73,\" 08pm, 0 9 ~ respectively. As the RTA annealing time was longer, the maximum concentration position was deeper from the surface and the concentration was lower Before the RTA annealing was done, we could not find any defect But after the RTA annealing was done, we could observe the RTA annealing changed the micro-defects into the secondary defects And we recognized those defects are removed by 1050°C RTA annealing","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116288269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730007
S. Paek, Soo‐Ho Park, Hyun-Yong Lee, H. Chung
Every year, m and more, many Focused-ion-be characteristics of various importan we anticipate tha lon-bcan litho] for sub-0.lpm ell patterns or mas1 obtain a clear-an water vapors as development is i the undercutting recently present< Carlo(MC) simL penetration into In previous F characteristics, ti exposure and by duality according on the energy dj case of RIE dev The Zmin optir resists, respectiv ,?,,,-thick inorga Though these process, high c( sensitivity 1-2 ( be solved, espec As one study the columnar-sti development. Tl15C-6-18
{"title":"Sub-0.1-/spl mu/m Patterning Characteristics of Inorganic Resists by Focused-Ion-Beam Lithography","authors":"S. Paek, Soo‐Ho Park, Hyun-Yong Lee, H. Chung","doi":"10.1109/IMNC.1998.730007","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730007","url":null,"abstract":"Every year, m and more, many Focused-ion-be characteristics of various importan we anticipate tha lon-bcan litho] for sub-0.lpm ell patterns or mas1 obtain a clear-an water vapors as development is i the undercutting recently present< Carlo(MC) simL penetration into In previous F characteristics, ti exposure and by duality according on the energy dj case of RIE dev The Zmin optir resists, respectiv ,?,,,-thick inorga Though these process, high c( sensitivity 1-2 ( be solved, espec As one study the columnar-sti development. Tl15C-6-18","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115880169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-13DOI: 10.1109/IMNC.1998.730085
M. Komuro
Electron-beam(EB) induced deposition will be very attractive method for producing nanometer-scale dots array to investigate single electron transport devices because of its simplicity without any successive processes such as etching and metal lift-off. In addition, there is the advantage of independent controllability of junction characteristics such as tunnel resistance and capacitance. In this work, hndamental properties of deposition process and deposits using m 6 gas are described. The EB system used here has been already reported, which can be evacuated down to Torr with the beam diameter of about 3nm with minimum increment of 2.5nm in deflection. The gas of w F 6 was introduced from the nozzle equipped in this system up to 1-2x Au electrodes with 0.8pm gap on SiOJSi substrate were used to measure the current-voltage(1-V) characteristics of wire, single tunnel junction and transistor At first, thickness profiles of deposited film is investigated, which is strongly dependent upon beam scanning method. It is revealed that secondary electrons generated by primary beam make a major role for chemical reaction from experiments and simulation Therefore the width of wire is about 13 nm in spite of the 3-nm incident beam. The resistivity of wires in the dose region more than 15pUshot is estimated to be less than 0.6mS1 cm and independent of the temperature between 230 and 300K. However at lower doses the resistance rapidly increases by 5 orders of magnitudes. In order to evaluate controllability of junction properties, tunnel barrier are produced. Most of I-V curves for them are fitted to Fowler-Nordheim plot a gradient of which changes systematically with the increase in designed space. This result indicates clearly the junction properties can be controlled at least with the accuracy of minimum deflection increment. From these results, the barrier height is estimated to be more than 0.2 eV. The reason for the lower barrier height is described. By using this technique, single electron transistors with in-plane gate are produced and electrical property shows Coulomb oscillation (drain current oscillation by gate modulation) at 230 K Torr following the EB exposure, where
电子束诱导沉积由于其简单，不需要蚀刻和金属剥离等连续过程，将成为研究纳米级单电子输运器件的极具吸引力的方法。此外，还具有隧道电阻和电容等结特性可独立控制的优点。本文介绍了m6气体沉积过程和沉积物的基本性质。本文所使用的EB系统已有报道，该系统的真空度可低至Torr，光束直径约为3nm，偏转最小增量为2.5nm。在SiOJSi衬底上，采用1-2x Au电极，以0.8pm的间隙测量导线、单隧道结和晶体管的电流-电压(1-V)特性。首先，研究了沉积膜的厚度分布，这在很大程度上取决于光束扫描法。实验和模拟结果表明，主光束产生的二次电子在化学反应中起主要作用，因此，尽管入射光束为3 nm，但线的宽度约为13 nm。在剂量大于15pUshot的区域，估计导线的电阻率小于0.6mS1 cm，与230 ~ 300K之间的温度无关。然而，在较低剂量下，耐药性迅速增加5个数量级。为了评价结性质的可控性，产生了隧道势垒。它们的大部分I-V曲线都拟合到Fowler-Nordheim图中，其梯度随设计空间的增加而系统变化。这一结果清楚地表明，至少可以用最小挠度增量的精度来控制结的性质。根据这些结果，势垒高度估计大于0.2 eV。描述了屏障高度较低的原因。通过使用该技术，可以生产出平面内栅极的单电子晶体管，其电学特性在230 K Torr下显示出库仑振荡(栅极调制的漏极电流振荡)，其中
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