Yukihiro Seki, Yanzhe Wang, Q. Thieu, S. Kuboya, S. Sanorpim, K. Onabe
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引用次数: 0
Abstract
Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460–500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for lower growth temperatures and higher N/P ratios, and the N concentration up to 0.18% has been attained. The 150–170 nm-thick InPN films are coherently grown on InP(001) without lattice relaxation.
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