V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr
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引用次数: 0
Abstract
Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.
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