{"title":"A Broadband D-Band Cavity-Backed Coupled-Feed Patch Antenna in Wafer Level Package","authors":"Xiaocheng Wang, G. Xiao, Hao Cheng","doi":"10.1109/IWS55252.2022.9977515","DOIUrl":null,"url":null,"abstract":"A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.
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