{"title":"Low specific on-resistance p-type OPTVLDLDMOS with double hole-conductive paths for SPIC application","authors":"Junji Cheng, Xingbi Chen","doi":"10.1109/ISPSD.2012.6229064","DOIUrl":null,"url":null,"abstract":"A novel p-type DP-OPTVLD (Double-Paths & OPTimum-Variational-Lateral-Doping) LDMOS is proposed. It features the double hole-conductive paths formed by a top and a buried p-layer in the drift region using OPTVLD technique, which significantly contribute to reducing device specific on-resistance. The design principle and electrical characteristics of the proposed structure are investigated theoretically and experimentally. Simulation results show that the specific on-resistances are 155/689 mΩ·cm2 with breakdown voltages of 300/800 V for the proposed structure, respectively, which are less than 60% of that with corresponding breakdown voltages for the conventional structure. This structure used as high-side can apply to SPIC with a low integration difficulty and a low fabrication cost.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A novel p-type DP-OPTVLD (Double-Paths & OPTimum-Variational-Lateral-Doping) LDMOS is proposed. It features the double hole-conductive paths formed by a top and a buried p-layer in the drift region using OPTVLD technique, which significantly contribute to reducing device specific on-resistance. The design principle and electrical characteristics of the proposed structure are investigated theoretically and experimentally. Simulation results show that the specific on-resistances are 155/689 mΩ·cm2 with breakdown voltages of 300/800 V for the proposed structure, respectively, which are less than 60% of that with corresponding breakdown voltages for the conventional structure. This structure used as high-side can apply to SPIC with a low integration difficulty and a low fabrication cost.
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