Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 1900-01-01 DOI:10.1109/S3S.2013.6716522

M. de Souza, R. T. Doria, E. Simoen, J. Martino, C. Claeys, M. Pavanello

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Abstract

This work presented an experimental study of the influence of combining the biaxial strain and 45° substrate rotation on the low-frequency noise of triple gate MuGFETs with different WFin and bias conditions. The results showed a 1/f noise characteristic for the strained and strained rotated devices in linear region, independent of WFin The strained rotated nMuGFET presents a lower LFN for narrow dimensions for practically all VGT condition, meanwhile for wider devices the opposite was found. The substrate rotation of strained MuGFETs is able to reduce the sidewall LFN.

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基板旋转对应变三栅mugfet低频噪声的影响

本文通过实验研究了双轴应变和45°衬底旋转相结合对不同WFin和偏置条件下三栅mugfet低频噪声的影响。结果表明，应变和应变旋转器件在线性区域具有1/f的噪声特性，与WFin无关。在几乎所有VGT条件下，应变旋转nMuGFET在窄尺寸下具有较低的LFN，而在较宽的器件中则相反。应变mugfet的基板旋转能够降低侧壁LFN。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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