C. Lee, Y.H. Kim, H. Luan, S.J. Lee, T. Jeon, W. Bai, D. Kwong
{"title":"MOS devices with high quality ultra thin CVD ZrO/sub 2/ gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes","authors":"C. Lee, Y.H. Kim, H. Luan, S.J. Lee, T. Jeon, W. Bai, D. Kwong","doi":"10.1109/VLSIT.2001.934987","DOIUrl":null,"url":null,"abstract":"In this paper, we have successfully fabricated and characterized self-aligned TaN and TaN/poly-Si gated n-MOSFETs with ultra thin (EOT=11 /spl Aring/) CVD ZrO/sub 2/ gate dielectrics. It is show that while both gate stacks show excellent leakage current and good thermal stability after a 900/spl deg/C, 30 s, N/sub 2/ anneal, the TaN/poly-Si ZrO/sub 2/ devices exhibit superior thermal stability even after 1000/spl deg/C, 30 s, N/sub 2/ anneal. In addition, the TaN/poly-Si devices show negligible frequency dependence of CV, charge trapping, and superior TDDB characteristics, compared to TaN devices. Well-behaved N-MOSFETs with both TaN and TaN/poly-Si gate electrodes are demonstrated.","PeriodicalId":232773,"journal":{"name":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2001.934987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
In this paper, we have successfully fabricated and characterized self-aligned TaN and TaN/poly-Si gated n-MOSFETs with ultra thin (EOT=11 /spl Aring/) CVD ZrO/sub 2/ gate dielectrics. It is show that while both gate stacks show excellent leakage current and good thermal stability after a 900/spl deg/C, 30 s, N/sub 2/ anneal, the TaN/poly-Si ZrO/sub 2/ devices exhibit superior thermal stability even after 1000/spl deg/C, 30 s, N/sub 2/ anneal. In addition, the TaN/poly-Si devices show negligible frequency dependence of CV, charge trapping, and superior TDDB characteristics, compared to TaN devices. Well-behaved N-MOSFETs with both TaN and TaN/poly-Si gate electrodes are demonstrated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
