2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

Pub Date : 2001-06-12 DOI: 10.1109/VLSIT.2001.934979 B. Kaczer, R. Degraeve, A. De Keersgieter, K. Van de Mieroop, T. Bearda, G. Groeseneken

A strategy for long data retention time of 512 Mb DRAM with 0.12 /spl mu/m design rule

Pub Date : 2001-06-12 DOI: 10.1109/VLSIT.2001.934930 H. Uh, J.K. Lee, Y. Ahn, S. Lee, S. Hong, J. Lee, G. Koh, G. Jeong, T. Chung, Kinam Kim

Asymmetric source/drain extension transistor structure for high performance sub-50 nm gate length CMOS devices

Pub Date : 2001-06-12 DOI: 10.1109/VLSIT.2001.934925 T. Ghani, K. Mistry, P. Packan, M. Armstrong, S. Thompson, S. Tyagi, M. Bohr