A Highly Survivable C-band GaN HEMT LNA with Resistive Feedback Technique

Abstract

This paper presents a C-band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) designed utilizing 0.25 um AlGaN/GaN HEMT technology. The single-stage amplifier is designed based on Common-Source topology with series inductive source and R-C feedback network. The post-layout simulation results demonstrate that the noise figure is around 1.4 dB at the operating frequency 5.4 GHz dB and better than 2 dB across frequency band from 4.6 to 6.6 GHz. The saturated output power of this LNA 28 dBm with higher efficiency around 40 %. The LNA has an output P1 dB and OIP3 of 22 dBm and 35 dBm, respectively, which illustrated high linear performance and can survive with high input power overdrive up to 28-dBm CW input power. The full chip size is 1.5 mm ⨯ 1.7 mm.