A new embedded inductor for ZVS DC-DC converter applications

Xiangming Fang, Rongxiang Wu, Lulu Peng, J. Sin
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引用次数: 9

Abstract

In this paper, a new tapered silicon-embedded coreless power inductor is proposed and demonstrated. The width and depth for the different turns of the inductor are designed with different values to reduce the proximity effect. An 18.6 nH inductance and a peak Q factor of 12.1 are achieved at 23 MHz within a chip area of 0.8 mm2. The AC power loss of the inductor is reduced by a maximum of 56% using the novel design. The inductor shows a peak efficiency of 91% in ZVS conversion applications, and is the highest in monolithic ZVS DC-DC converters reported so far.
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一种用于ZVS DC-DC变换器的新型嵌入式电感
本文提出并演示了一种新型锥形嵌硅无芯功率电感。电感器不同匝数的宽度和深度设计为不同值,以减小接近效应。在芯片面积为0.8 mm2的23 MHz下,实现了18.6 nH的电感和12.1的峰值Q因子。采用这种新颖的设计,电感的交流功率损耗最大可降低56%。该电感器在ZVS转换应用中显示出91%的峰值效率,是迄今为止报道的单片ZVS DC-DC转换器中最高的。
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