Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)

Abstract

The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space $k \cdot p$ approach in combination with the existing NEGF module.