Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241611
Sanjay Gopalan, G. Gaddemane, M. L. Van de Put, M. Fischetti
Monolayer SnSe is a two-dimensional (2D) material with an indirect band gap ($sim$ 0.92 eV) that can be obtained relatively easily by exfoliating bulk SnSe crystals. Like most 2D van der Waals monolayers, its layered nature reduces or eliminates the defects found in bulk materials, such as surface interface roughness and dangling bonds. Here, we show promising results of first-principle calculations of the low-field mobility and high-field characteristics of monolayer SnSe by implementing the fullband Monte Carlo approach.
{"title":"Theoretical study of electronic transport in monolayer SnSe","authors":"Sanjay Gopalan, G. Gaddemane, M. L. Van de Put, M. Fischetti","doi":"10.23919/SISPAD49475.2020.9241611","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241611","url":null,"abstract":"Monolayer SnSe is a two-dimensional (2D) material with an indirect band gap ($sim$ 0.92 eV) that can be obtained relatively easily by exfoliating bulk SnSe crystals. Like most 2D van der Waals monolayers, its layered nature reduces or eliminates the defects found in bulk materials, such as surface interface roughness and dangling bonds. Here, we show promising results of first-principle calculations of the low-field mobility and high-field characteristics of monolayer SnSe by implementing the fullband Monte Carlo approach.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121276982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241621
T. Hamano, K. Urabe, K. Eriguchi
This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a conventional device simulation. Unique capacitance-voltage characteristics of MOS capacitors were obtained depending on the energy profiles, which shows good agreement with experimental results. The relationship between the defect profile and device parameter variation was clarified for n- and p-channel MOSFETs. The prediction results suggest the significance of precise control of spatial and energy profiles of defects for future MOS device design and fabrication.
{"title":"5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance","authors":"T. Hamano, K. Urabe, K. Eriguchi","doi":"10.23919/SISPAD49475.2020.9241621","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241621","url":null,"abstract":"This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a conventional device simulation. Unique capacitance-voltage characteristics of MOS capacitors were obtained depending on the energy profiles, which shows good agreement with experimental results. The relationship between the defect profile and device parameter variation was clarified for n- and p-channel MOSFETs. The prediction results suggest the significance of precise control of spatial and energy profiles of defects for future MOS device design and fabrication.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123707661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241627
N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.
{"title":"Modeling and Simulation of Si IGBTs","authors":"N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai","doi":"10.23919/SISPAD49475.2020.9241627","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241627","url":null,"abstract":"Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"437 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122884475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241624
R. Kosik, J. Cervenka, H. Kosina
Quantum electron transport in modern semiconductor devices can be described by a Wigner equation which is formally similar to the classical Liouville equation. The stationary Wigner equation has a singularity at zero momentum (k=0). In order to get a non-singular solution it is necessary to impose a constraint for the solution at k=0 which gives the constrained Wigner equation. We introduce a Petrov-Galerkin method for the solution of the corresponding constrained sigma equation. The constraint in the Wigner equation is interpreted as an extra test function and is naturally incorporated in the method.
{"title":"Numerical Solution of the Constrained Wigner Equation","authors":"R. Kosik, J. Cervenka, H. Kosina","doi":"10.23919/SISPAD49475.2020.9241624","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241624","url":null,"abstract":"Quantum electron transport in modern semiconductor devices can be described by a Wigner equation which is formally similar to the classical Liouville equation. The stationary Wigner equation has a singularity at zero momentum (k=0). In order to get a non-singular solution it is necessary to impose a constraint for the solution at k=0 which gives the constrained Wigner equation. We introduce a Petrov-Galerkin method for the solution of the corresponding constrained sigma equation. The constraint in the Wigner equation is interpreted as an extra test function and is naturally incorporated in the method.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"49 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114138244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241651
P. Blaise, Udita Kapoor, Mark A. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis
Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.
{"title":"Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below","authors":"P. Blaise, Udita Kapoor, Mark A. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis","doi":"10.23919/SISPAD49475.2020.9241651","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241651","url":null,"abstract":"Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green’s functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114515609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241643
Hiroo Koshimoto, H. Ishimabushi, Jaehyun Yoo, Yasuyuki Kayama, Satoru Yamada, U. Kwon, D. Kim
It has been proven that the multigrid method is promissing on large-scale scientific simulations. However there still remains some difficulties on applying the multigrid method, which is the system of systems such as FEM on stress analysis or coupled PDEs. Above all, the drift-diffusion model widely used in the device modeling is a typical case belonging to the problems. Because the model has a tight coupling between the electrostatic field and the carrier movements and this property prevents the multigrid method from working effectively. In this paper, we propose a technique to apply the multigrid method to the drift-diffusion model. The technique consists of reflection process between systems coupled in the equation. Consequently the technique helps to solve large-scale device simulations. We show the case of power devices.
{"title":"Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device Simulations","authors":"Hiroo Koshimoto, H. Ishimabushi, Jaehyun Yoo, Yasuyuki Kayama, Satoru Yamada, U. Kwon, D. Kim","doi":"10.23919/SISPAD49475.2020.9241643","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241643","url":null,"abstract":"It has been proven that the multigrid method is promissing on large-scale scientific simulations. However there still remains some difficulties on applying the multigrid method, which is the system of systems such as FEM on stress analysis or coupled PDEs. Above all, the drift-diffusion model widely used in the device modeling is a typical case belonging to the problems. Because the model has a tight coupling between the electrostatic field and the carrier movements and this property prevents the multigrid method from working effectively. In this paper, we propose a technique to apply the multigrid method to the drift-diffusion model. The technique consists of reflection process between systems coupled in the equation. Consequently the technique helps to solve large-scale device simulations. We show the case of power devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129868590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241609
D. Milardovich, M. Jech, Dominic Waldhoer, M. Waltl, T. Grasser
Due to its stochastic nature, the calculation of defect formation energies in amorphous structures is a CPU-intensive task. We demonstrate the use of machine learning to predict defect formation energies to significantly minimize the number of required calculations. Different combinations of descriptors and machine learning algorithms are used to predict the formation energies of hydroxyl E’ center defects in amorphous silicon dioxide structures. The performance of each combination is analyzed and compared to results obtained from direct ab initio calculations.
{"title":"Machine Learning Prediction of Defect Formation Energies in a-SiO2","authors":"D. Milardovich, M. Jech, Dominic Waldhoer, M. Waltl, T. Grasser","doi":"10.23919/SISPAD49475.2020.9241609","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241609","url":null,"abstract":"Due to its stochastic nature, the calculation of defect formation energies in amorphous structures is a CPU-intensive task. We demonstrate the use of machine learning to predict defect formation energies to significantly minimize the number of required calculations. Different combinations of descriptors and machine learning algorithms are used to predict the formation energies of hydroxyl E’ center defects in amorphous silicon dioxide structures. The performance of each combination is analyzed and compared to results obtained from direct ab initio calculations.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130610195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241667
A. Toral-Lopez, E. G. Marín, J. Cuesta, F. Ruiz, F. Pasadas, A. Medina-Rull, A. Godoy
This work numerically evaluates the impact of surface chemical reactions on the performance of 2D-FET based pH sensors. More precisely, we focus on the adsorption of chlorine ions and the expulsion of protons at the sensing interface of FET sensors. This analysis is performed through numerical simulations encompassing the modelling of both the semiconductor device and the liquid solution to be analysed. In the semiconductor region the 2D Poisson - 1D Continuity equations are self-consistently solved, while in the electrolyte region we deal with the modified Poisson - Boltzmann system [1]. The simulator also includes the interactions taking place at the electrolyte-sensing layer interface through: i) the non-constant profile of water permittivity, and ii) the steric effects in the surface ions concentration by means of the Potentials of Mean Force (PMFs) [2], [3]. This comprehensive description of the electrolyte-device interface provides a suitable framework to unveil the relevance of multiple chemical reactions, such as the adsorption of chlorine ions, on the behaviour of 2D-FET based pH sensors.
{"title":"Numerical study of surface chemical reactions in 2D-FET based pH sensors","authors":"A. Toral-Lopez, E. G. Marín, J. Cuesta, F. Ruiz, F. Pasadas, A. Medina-Rull, A. Godoy","doi":"10.23919/SISPAD49475.2020.9241667","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241667","url":null,"abstract":"This work numerically evaluates the impact of surface chemical reactions on the performance of 2D-FET based pH sensors. More precisely, we focus on the adsorption of chlorine ions and the expulsion of protons at the sensing interface of FET sensors. This analysis is performed through numerical simulations encompassing the modelling of both the semiconductor device and the liquid solution to be analysed. In the semiconductor region the 2D Poisson - 1D Continuity equations are self-consistently solved, while in the electrolyte region we deal with the modified Poisson - Boltzmann system [1]. The simulator also includes the interactions taking place at the electrolyte-sensing layer interface through: i) the non-constant profile of water permittivity, and ii) the steric effects in the surface ions concentration by means of the Potentials of Mean Force (PMFs) [2], [3]. This comprehensive description of the electrolyte-device interface provides a suitable framework to unveil the relevance of multiple chemical reactions, such as the adsorption of chlorine ions, on the behaviour of 2D-FET based pH sensors.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123520477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241655
Liu Jiang, A. Pal, E. Bazizi, Mehdi Saremi, He Ren, B. Alexander, Buvna Ayyagari-Sangamalli
Complementary FET (CFET), implemented by stacking NMOS and PMOS on top of each other, is considered as an emerging option to continue logic scaling beyond 3nm node. It can be configured with a fin-on-fin (fin-based CFET) or sheet-on-sheet (sheet-based CFET) structures. In this paper, we use 3D-TCAD simulation to compare those two configurations at both device and circuit levels. For accurate comparison between these two CFET configurations, we deploy a drift-diffusion simulation framework, calibrated to semi-classical sub-band BTE (Boltzmann Transport Equation). We show that for the same effective channel width, nMOS of sheet-based CFET has 10% higher drive-current compared to fin-based CFET. For pMOS, sheet-based CFET shows 5% lower drive-current compared to fin-based CFET. When compared for the same device footprint with increased nanosheet width, nMOS and pMOS sheet-based CFET shows 73% and 47% higher drive current respectively compared to fin-based CFET. Using 31-stage ring-oscillator as a representative circuit, we show that for the same electrical channel width, the circuit performance of the sheet-based CFET is 2.6% higher than the fin-based CFET at Vdd of 0.7V. When compared for the same device footprint, sheet-based CFET shows 9% higher circuit performance compared to the fin-based CFET.
{"title":"Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond","authors":"Liu Jiang, A. Pal, E. Bazizi, Mehdi Saremi, He Ren, B. Alexander, Buvna Ayyagari-Sangamalli","doi":"10.23919/SISPAD49475.2020.9241655","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241655","url":null,"abstract":"Complementary FET (CFET), implemented by stacking NMOS and PMOS on top of each other, is considered as an emerging option to continue logic scaling beyond 3nm node. It can be configured with a fin-on-fin (fin-based CFET) or sheet-on-sheet (sheet-based CFET) structures. In this paper, we use 3D-TCAD simulation to compare those two configurations at both device and circuit levels. For accurate comparison between these two CFET configurations, we deploy a drift-diffusion simulation framework, calibrated to semi-classical sub-band BTE (Boltzmann Transport Equation). We show that for the same effective channel width, nMOS of sheet-based CFET has 10% higher drive-current compared to fin-based CFET. For pMOS, sheet-based CFET shows 5% lower drive-current compared to fin-based CFET. When compared for the same device footprint with increased nanosheet width, nMOS and pMOS sheet-based CFET shows 73% and 47% higher drive current respectively compared to fin-based CFET. Using 31-stage ring-oscillator as a representative circuit, we show that for the same electrical channel width, the circuit performance of the sheet-based CFET is 2.6% higher than the fin-based CFET at Vdd of 0.7V. When compared for the same device footprint, sheet-based CFET shows 9% higher circuit performance compared to the fin-based CFET.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"106 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120915858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.23919/SISPAD49475.2020.9241601
M. Poljak, M. Matić
Performance of phosphorene nanoribbon (PNR) MOSFETs at “3 nm” logic technology node is studied using atomistic quantum transport simulations, with an emphasis on the impact of metal contacts, series resistance and transport ballisticity. We find that realistic metal contacts decrease drain current by up to 70%, which corresponds to more than $1400 Omega mu mathrm{m}$ in contact resistance (RSD). On the other hand, setting RSD to $270 Omega mumathrm{m}$, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.
利用原子量子输运模拟研究了磷烯纳米带mosfet在“3nm”逻辑技术节点上的性能，重点研究了金属触点、串联电阻和输运弹道的影响。我们发现，实际的金属触点可减少漏极电流达70%, which corresponds to more than $1400 Omega mu mathrm{m}$ in contact resistance (RSD). On the other hand, setting RSD to $270 Omega mumathrm{m}$, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.
{"title":"Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance","authors":"M. Poljak, M. Matić","doi":"10.23919/SISPAD49475.2020.9241601","DOIUrl":"https://doi.org/10.23919/SISPAD49475.2020.9241601","url":null,"abstract":"Performance of phosphorene nanoribbon (PNR) MOSFETs at “3 nm” logic technology node is studied using atomistic quantum transport simulations, with an emphasis on the impact of metal contacts, series resistance and transport ballisticity. We find that realistic metal contacts decrease drain current by up to 70%, which corresponds to more than $1400 Omega mu mathrm{m}$ in contact resistance (RSD). On the other hand, setting RSD to $270 Omega mumathrm{m}$, as foreseen by the International Roadmap for Devices and Systems (IRDS), PNR MOSFETs would need to operate at 50% to 70% of their ballistic limit, depending on PNR width, in order to meet IRDS targets.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116191006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：