Sanghoon Lee, Cheng-Ying Huang, A. Carter, J. Law, D. Elias, V. Chobpattana, B. Thibeault, W. Mitchell, S. Stemmer, A. Gossard, M. Rodwell
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引用次数: 14
Abstract
We demonstrate In0.53Ga0.47As surface channel MOSFETs using a gate-last process and MBE source/drain (S/D) regrowth. The structure uses a sacrificial N+ InGaAs channel cap layer between the regrown S/D contact layer and the channel, which is removed in the channel region by a “digital” etch process incorporating UV ozone oxidation and surface stripping in dilute HCl. A device with 65 nm-Lg and 1.2 nm EOT shows 1.6 mS/μm peak transconductance at Vds = 0.5 V and 120 mV/dec SS at Vds = 0.05 V, while 535 nm-Lg devices show 95 mV/dec SS at at Vds = 0.1 V.
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