{"title":"A 14-V/sub pp/ 10 Gbit/s E/O modulator driver IC","authors":"J. Carroll, C. Campbell","doi":"10.1109/GAAS.2001.964394","DOIUrl":null,"url":null,"abstract":"The development of a high voltage, wideband E/O modulator driver IC is described. The DC coupled, single-ended amplifier exhibits a 3 dB-bandwidth of 11.5 GHz, 9.5 dB small signal gain, and 14-V/sub pp/ output voltage swing. The IC utilizes a 0.25 /spl mu/m pHEMT production process and provides sufficient bandwidth and output power for 10 Gbit/s high voltage E/O modulator applications.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The development of a high voltage, wideband E/O modulator driver IC is described. The DC coupled, single-ended amplifier exhibits a 3 dB-bandwidth of 11.5 GHz, 9.5 dB small signal gain, and 14-V/sub pp/ output voltage swing. The IC utilizes a 0.25 /spl mu/m pHEMT production process and provides sufficient bandwidth and output power for 10 Gbit/s high voltage E/O modulator applications.
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