A low noise charge sensitive amplifier with adjustable leakage compensation in 0.18µm CMOS process

Xiangyu Li, Qi Zhang, Yihe Sun
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引用次数: 3

Abstract

Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18µm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.
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采用0.18µm CMOS工艺,具有可调漏损补偿的低噪声电荷敏感放大器
电荷敏感放大器(CSA)在深亚微米工艺中的栅极泄漏不仅会增加噪声,而且会影响前置放大器输出的直流电压。本文提出了一种基于0.18µm CMOS工艺的CdZnTe粒子探测器读出CSA,其复位和泄漏补偿配置具有低噪声和短复位时间,特别是可调节以适应泄漏电流的变化。该设计已经过纸带验证。测试芯片达到250e等效噪声收费。它的复位时间确实是可调的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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