A low cost individual-well adaptive body bias (IWABB) scheme for leakage power reduction and performance enhancement in the presence of intra-die variations

Tom W. Chen, Justin Gregg
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引用次数: 16

Abstract

This paper presents a new method of adapting body biasing on a chip during post-fabrication testing in order to mitigate the effects of process variations. Individual well biasing voltages can be changed to be connected either to a chip wide well bias or to a different bias voltage through a self-regulating mechanism, allowing biasing voltage adjustments on a per well basis. The scheme requires only one bias voltage distribution network, but allows for back biasing adjustments to more effectively mitigate die-to-die and within-die process variations. The biasing setting for each well is determined using a modified genetic algorithm. Our experimental results show that binning yields as low as 17% can be improved to greater than 90% after using the proposed IWABB method.
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一种低成本的单井自适应体偏置(IWABB)方案,用于在存在模内变化的情况下降低泄漏功率并提高性能
本文提出了一种在加工后测试过程中调整芯片体偏置的新方法,以减轻工艺变化的影响。单个井的偏置电压可以改变,既可以连接到芯片宽的井偏置,也可以通过自调节机制连接到不同的偏置电压,从而可以在每个井的基础上调整偏置电压。该方案只需要一个偏置电压分配网络,但允许反向偏置调整,以更有效地减轻模对模和模内工艺变化。每口井的偏置设置使用改进的遗传算法确定。我们的实验结果表明,采用IWABB方法后,可以将低至17%的分束率提高到90%以上。
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