A low cost individual-well adaptive body bias (IWABB) scheme for leakage power reduction and performance enhancement in the presence of intra-die variations
{"title":"A low cost individual-well adaptive body bias (IWABB) scheme for leakage power reduction and performance enhancement in the presence of intra-die variations","authors":"Tom W. Chen, Justin Gregg","doi":"10.1109/DATE.2004.1268855","DOIUrl":null,"url":null,"abstract":"This paper presents a new method of adapting body biasing on a chip during post-fabrication testing in order to mitigate the effects of process variations. Individual well biasing voltages can be changed to be connected either to a chip wide well bias or to a different bias voltage through a self-regulating mechanism, allowing biasing voltage adjustments on a per well basis. The scheme requires only one bias voltage distribution network, but allows for back biasing adjustments to more effectively mitigate die-to-die and within-die process variations. The biasing setting for each well is determined using a modified genetic algorithm. Our experimental results show that binning yields as low as 17% can be improved to greater than 90% after using the proposed IWABB method.","PeriodicalId":335658,"journal":{"name":"Proceedings Design, Automation and Test in Europe Conference and Exhibition","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Design, Automation and Test in Europe Conference and Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DATE.2004.1268855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
This paper presents a new method of adapting body biasing on a chip during post-fabrication testing in order to mitigate the effects of process variations. Individual well biasing voltages can be changed to be connected either to a chip wide well bias or to a different bias voltage through a self-regulating mechanism, allowing biasing voltage adjustments on a per well basis. The scheme requires only one bias voltage distribution network, but allows for back biasing adjustments to more effectively mitigate die-to-die and within-die process variations. The biasing setting for each well is determined using a modified genetic algorithm. Our experimental results show that binning yields as low as 17% can be improved to greater than 90% after using the proposed IWABB method.