N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah
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引用次数: 9
Abstract
Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.
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