Pub Date : 2004-12-01DOI: 10.1109/ISLC.2004.1382773
H. Kuo, Ya-hsien Chang, F. Lai, Po-Tsung Lee, Shing-chung Wang
High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.
{"title":"High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser","authors":"H. Kuo, Ya-hsien Chang, F. Lai, Po-Tsung Lee, Shing-chung Wang","doi":"10.1109/ISLC.2004.1382773","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382773","url":null,"abstract":"High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131205959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-01DOI: 10.1109/ISLC.2004.1382775
T. Yazaki, R. Inohara, K. Nishimura, M. Usami, A. Matsumoto, K. Utaka
XGM based wavelength conversion was investigated using two SOAs with different lengths employing counter-propagating assist light. It was confirmed that the converted signal had a smaller chirp for the shorter SOA.
{"title":"Spectral chirping suppressed wavelength conversion at 10 Gbit/s using cross gain modulation in semiconductor optical amplifier with injection of counter-propagating assist light","authors":"T. Yazaki, R. Inohara, K. Nishimura, M. Usami, A. Matsumoto, K. Utaka","doi":"10.1109/ISLC.2004.1382775","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382775","url":null,"abstract":"XGM based wavelength conversion was investigated using two SOAs with different lengths employing counter-propagating assist light. It was confirmed that the converted signal had a smaller chirp for the shorter SOA.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120937383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-01DOI: 10.1109/ISLC.2004.1382788
A. Danner, T. Kim, D. Grasso, E. Young, K. Choquette
Small signal modulation of a vertical cavity surface-emitting laser (VCSEL) incorporating a photonic-crystal vertical waveguide structure for lateral confinement was carried out. A record 9-GHz bandwidth was achieved under single lateral mode operation.
{"title":"Small signal modulation of a single mode photonic crystal vertical cavity surface-emitting laser","authors":"A. Danner, T. Kim, D. Grasso, E. Young, K. Choquette","doi":"10.1109/ISLC.2004.1382788","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382788","url":null,"abstract":"Small signal modulation of a vertical cavity surface-emitting laser (VCSEL) incorporating a photonic-crystal vertical waveguide structure for lateral confinement was carried out. A record 9-GHz bandwidth was achieved under single lateral mode operation.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121697187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-12-01DOI: 10.1109/ISLC.2004.1382790
X. Zhao, K. Williams, P. Bennett, Y. Chu, I. White, Y. Lin, Y.C. Yu, Y.-L. Huang, D. Kang, M. Blamire
An ultrashort 1.5 /spl mu/m photonic crystal is integrated with a laser diode to give single-mode hop-free operation. Theoretical calculations confirm for the first time the role of the spatially dependent spectral response for frequency selection.
{"title":"Novel single mode laser operation through transverse mode coupling in a 2-D photonic crystal","authors":"X. Zhao, K. Williams, P. Bennett, Y. Chu, I. White, Y. Lin, Y.C. Yu, Y.-L. Huang, D. Kang, M. Blamire","doi":"10.1109/ISLC.2004.1382790","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382790","url":null,"abstract":"An ultrashort 1.5 /spl mu/m photonic crystal is integrated with a laser diode to give single-mode hop-free operation. Theoretical calculations confirm for the first time the role of the spatially dependent spectral response for frequency selection.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125630343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382748
Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, T. Kikugawa
By optimizing the quaternary composition of an n-cladding layer within a 1480-nm laser using an asymmetric-cladding structure, we have achieved saturation output power of 1.2-W with lowered power consumption.
{"title":"1480-nm pump laser with asymmetric quaternary cladding structure achieving high output power of >1.2 W with low power consumption","authors":"Y. Nagashima, S. Onuki, Y. Shimose, A. Yamada, T. Kikugawa","doi":"10.1109/ISLC.2004.1382748","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382748","url":null,"abstract":"By optimizing the quaternary composition of an n-cladding layer within a 1480-nm laser using an asymmetric-cladding structure, we have achieved saturation output power of 1.2-W with lowered power consumption.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126720890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382727
C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren
Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.
{"title":"Short-cavity 1.55 /spl mu/m DBR lasers integrated with high-speed EAM modulators","authors":"C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren","doi":"10.1109/ISLC.2004.1382727","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382727","url":null,"abstract":"Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122412501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382781
J. Hashizume, F. Koyama
We demonstrate a metal nano-aperture GaAs VCSEL for sub-wavelength optical near-filed probing, which exhibits the strong plasmon enhancement of both optical near-field intensity and voltage signals by introducing a metal nano-particle in the nano-aperture.
{"title":"Plasmon enhanced optical near-field probing of metal nano-aperture GaAs VCSEL","authors":"J. Hashizume, F. Koyama","doi":"10.1109/ISLC.2004.1382781","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382781","url":null,"abstract":"We demonstrate a metal nano-aperture GaAs VCSEL for sub-wavelength optical near-filed probing, which exhibits the strong plasmon enhancement of both optical near-field intensity and voltage signals by introducing a metal nano-particle in the nano-aperture.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382758
S. Kamiyama, K. Iida, T. Kawashima, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, M. Iwaya, H. Amano, I. Akasaki
We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which was grown on low-dislocation-density AlGaN template. The lasing operation under pulsed injection was achieved with the threshold current of about 200 mA.
{"title":"UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template","authors":"S. Kamiyama, K. Iida, T. Kawashima, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, M. Iwaya, H. Amano, I. Akasaki","doi":"10.1109/ISLC.2004.1382758","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382758","url":null,"abstract":"We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which was grown on low-dislocation-density AlGaN template. The lasing operation under pulsed injection was achieved with the threshold current of about 200 mA.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121479384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382749
D. Imanishi, Y. Sato, K. Naganuma, S. Ito, S. Hirata
AlInP/GaInP 7 W laser arrays with a uniform intensity distribution and a low smile of 1 /spl mu/m have been developed for a display system. The estimated lifetime exceeds 10000 hours under CW operation.
{"title":"Highly reliable 7 W operation of 644 nm wavelength laser diode arrays with top-hat near field pattern","authors":"D. Imanishi, Y. Sato, K. Naganuma, S. Ito, S. Hirata","doi":"10.1109/ISLC.2004.1382749","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382749","url":null,"abstract":"AlInP/GaInP 7 W laser arrays with a uniform intensity distribution and a low smile of 1 /spl mu/m have been developed for a display system. The estimated lifetime exceeds 10000 hours under CW operation.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131918120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382736
M. Takenaka, M. Raburn, Y. Nakano
Optical flip-flop operation has been achieved in an MMI-BLD with reverse biased saturable absorbers for the first time. The reverse bias enabled reduction of absorber length and is expected to result in high speed operation.
{"title":"All-optical flip-flop multimode interference bistable laser with reverse biased saturable absorbers","authors":"M. Takenaka, M. Raburn, Y. Nakano","doi":"10.1109/ISLC.2004.1382736","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382736","url":null,"abstract":"Optical flip-flop operation has been achieved in an MMI-BLD with reverse biased saturable absorbers for the first time. The reverse bias enabled reduction of absorber length and is expected to result in high speed operation.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130146075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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