H. Kuo, Ya-hsien Chang, F. Lai, Po-Tsung Lee, Shing-chung Wang
{"title":"High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser","authors":"H. Kuo, Ya-hsien Chang, F. Lai, Po-Tsung Lee, Shing-chung Wang","doi":"10.1109/ISLC.2004.1382773","DOIUrl":null,"url":null,"abstract":"High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.