Using Volume Cell-aware Diagnosis Results to Improve Physical Failure Analysis Efficiency

Hanson Peng, Mao-Yuan Hsia, Man-Ting Pang, I.-Y. Chang, Jeff Fan, Huaxing Tang, Manish Sharma, Wu Yang
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引用次数: 1

Abstract

Statistical analysis based on layout-aware scan diagnosis has been successfully used for identifying defect root causes and reducing physical failure analysis (PFA) efforts, especially for interconnect defects. With increasing complexity and density of designs manufactured by FinFET technologies, more and more cell internal defects are observed. For such defects, the root cause deconvolution (RCD) and PFA based on layout-aware diagnosis learning become less efficient because diagnosis reports can only call out cell instances, but can’t pinpoint the defect location within the suspected cell. Cell-aware diagnosis (CAD) uses analog simulation results to accurately locate defects inside standard cells. The cell-aware RCD (RCAD) provides a comprehensive defect pareto for both cell-internal defects and interconnect defects. Both techniques can be very beneficial for PFA. In this work, we present a case study which combines these techniques to successfully identify a systematic cell internal issue caused by a sensitive layout pattern with dramatically improved PFA efficiency for recent silicon data manufactured by an advanced FinFET technology.
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利用体积细胞感知诊断结果提高物理故障分析效率
基于布局感知扫描诊断的统计分析已经成功地用于识别缺陷的根本原因和减少物理失效分析(PFA)的工作量,特别是对于互连缺陷。随着FinFET技术设计的复杂性和密度的增加,越来越多的电池内部缺陷被观察到。对于此类缺陷,基于布局感知诊断学习的根本原因反卷积(RCD)和PFA的效率较低,因为诊断报告只能呼出单元实例,而不能精确定位可疑单元内的缺陷位置。细胞感知诊断(CAD)利用模拟仿真结果对标准细胞内的缺陷进行精确定位。细胞感知RCD (RCAD)为细胞内部缺陷和互连缺陷提供了一个全面的缺陷帕累托。这两种技术对PFA都非常有益。在这项工作中,我们提出了一个案例研究,将这些技术结合起来,成功地识别了由敏感布局模式引起的系统电池内部问题,并显着提高了由先进的FinFET技术制造的最新硅数据的PFA效率。
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