Challenges and Approaches of 2.5D high density Flip chip interconnect on through mold interposer

S. Lim, S. Chong, W. Seit, T. Chai
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引用次数: 2

Abstract

The continuous requirements of package miniaturization in the demand of mobile application market have shown the increase in demand of many FOWLP packaging [1]. The applications of FOWLP has many advantages including shorter interconnection, lower heat resistance, better electrical efficiency and smaller package form factor [2].The work presented in this paper describes the reconfigured wafer approach in fan-out wafer level technology that allows multiple dies with high solder interconnect to package using the molded interposer for FOWLP technology. In this work, we presented some of the work done prior to the flip chip bonding process and the different approaches to resolve some of the process issues encountered in the assembly process for 3 test dies with high I/Os onto a fan-out mold interposer. The 1st test die is the 15x15mm ASIC die with 21472 I/Os and the remaining 2 dies are the 7x7mm HBM dies with 4942 I/Os. Both the ASIC and HBM dies have a minimum bump pitch at 55 μ m. The 12 inch through molded interposer wafer is singulated into individual interposer prior to the flip chip attachment process.The package warpage remains the main concern in the through mold interposer assembly. To minimize interposer warpage, a metal stiffener was attached to the molded interposer. Results shows the attachment of the metal stiffener helps to reduce the package warpage. In addition, a thinner die thickness of 150 μ m helps to reduce the overall molded interposer package‘s warpage after assembly compared to a die thickness of 500 μ m. Cross-section analysis was done to inspect the solderjoint shape at 150 μ m and 500 μ m die thickness. Further optimized thermocompression bonding process and capillary underfill process helps to ensure good solderjoint interconnection and no underfill voids for a robust Fine pitch interconnect Fan-out WLP assembly.
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2.5D高密度倒装芯片通模互连的挑战与方法
移动应用市场需求对封装小型化的不断要求,使得许多FOWLP封装需求增加[1]。FOWLP的应用具有互连时间短、耐热性低、电效率高、封装尺寸小等优点[2]。本文介绍的工作描述了扇出晶圆级技术中的重新配置晶圆方法,该方法允许使用用于FOWLP技术的模压中间层封装具有高焊料互连的多个晶圆。在这项工作中,我们介绍了在倒装芯片键合过程之前所做的一些工作,以及解决在扇形模具中间层上具有高I/ o的3个测试模具组装过程中遇到的一些工艺问题的不同方法。第一个测试芯片是15x15mm ASIC芯片,有21472个I/ o,其余2个是7x7mm HBM芯片,有4942个I/ o。ASIC和HBM模具的最小凸距均为55 μ m。在倒装芯片连接过程之前,将12英寸的模压中间层晶圆单独划分为单个中间层。封装翘曲仍然是通过模具中间组件的主要问题。为了尽量减少中间垫翘曲,金属加强筋被附加到模压中间垫。结果表明,金属加强筋的附加有助于减少包装翘曲。此外,与厚度为500 μ m的模具相比,厚度为150 μ m的模具有助于减少整体成型中间层封装在组装后的翘曲。进一步优化的热压键合工艺和毛细管下填充工艺有助于确保良好的焊点互连和无下填充空隙,从而实现坚固的细间距互连扇出式WLP组件。
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